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Publications

• 10.0 Ranking Ren: Nanoscale MOSFETs: Physics, ...

  Nanoscale MOSFETs: Physics, Simulation and Design

  Type	Publications
  Contributor(s)	Zhibin Ren
  Date	26 Oct. 2006
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  This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer ...

• 10.0 Ranking Guo: Carbon Nanotube Electronics: ...

  Carbon Nanotube Electronics: Modeling, Physics, and Applications

  Type	Publications
  Contributor(s)	Jing Guo
  Date	30 Oct. 2006
  Avg. Rating	5.0 out of 5 stars  (3)
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  In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ ...

• 10.0 Ranking Venugopal: Modeling Quantum Transport in ...

  Modeling Quantum Transport in Nanoscale Transistors

  Type	Publications
  Contributor(s)	Ramesh Venugopal
  Date	30 Oct. 2006
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  As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new ...

• 9.1 Ranking Rahman: Exploring New Channel Materials ...

  Exploring New Channel Materials for Nanoscale CMOS

  Type	Publications
  Contributor(s)	Anisur Rahman
  Date	21 May. 2006
  Avg. Rating	4.5 out of 5 stars  (2)
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  The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-k dielectrics, and ...

• 9.0 Ranking Damle: Nanoscale Device Modeling: From ...

  Nanoscale Device Modeling: From MOSFETs to Molecules

  Type	Publications
  Contributor(s)	Prashant Subhash Damle
  Date	21 Sep. 2006
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  This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices. As convetional metal oxide semiconductor devices shrink below the one hundred nanometer regime, quantum mechanical effects are beginning to play an increasingly important role in ...

• 6.3 Ranking Klimeck: Electron-Phonon and ...

  Electron-Phonon and Electron-Electron Interactions in Quantum Transport

  Type	Publications
  Contributor(s)	Gerhard Klimeck
  Date	14 Jan. 2008
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  The ob jective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and electron-phonon interactions are important. We concentrate here on the most developed vertical quantum device, the ...

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