Tags: NCN Group - Semiconductor Device Physics

Description

Education group: Semiconductor Device Physics.

Semiconductor Device Physics

Teaching Materials (1-6 of 6)

  1. MOSFET Design Calculations - Step 3

    Teaching Materials | 01 Apr 2012 | Contributor(s):: Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  2. MOSFET Design Simulation I

    Teaching Materials | 07 Mar 2012 | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  3. MOSFET Design Calculations - Step 2

    Teaching Materials | 05 Mar 2012 | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  4. MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values

    Teaching Materials | 05 Feb 2012 | Contributor(s):: Stella Quinones

    The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...

  5. MOSFET Design Calculations - Step 1

    Teaching Materials | 02 Jan 2011 | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  6. PN Junctions: Simulation and Calculation of Electrostatic Variables

    Teaching Materials | 02 Jan 2011 | Contributor(s):: Stella Quinones

    Homework assignment that combines basic PN junction electrostatic variable calculations (Vbi, Xn, Xp and Emax) with the simulation of PN junctions for 2 sets of doping conditions. Both forward and reverse bias conditions are simulated. This homework assignment is designed for junior level...