Tags: nanotransistors

Description

 

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

 

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  1. ECE 612 Lecture 6: Quantum Mechanical Effects

    Online Presentations | 05 Sep 2006 | Contributor(s):: Mark Lundstrom

  2. ECE 612 Lecture 9: MOSFET IV, Part III

    Online Presentations | 12 Sep 2006 | Contributor(s):: Mark Lundstrom

  3. ECE 612 Lecture 5: Poly Si Gate MOS Capacitors

    Online Presentations | 05 Sep 2006 | Contributor(s):: Mark Lundstrom

  4. ECE 612 Lecture 4: MOS Capacitors

    Online Presentations | 05 Sep 2006 | Contributor(s):: Mark Lundstrom

  5. Nanoelectronic Architectures

    Online Presentations | 24 Feb 2005 | Contributor(s):: Greg Snider

    Nanoelectronic architectures at this point are necessarily speculative: We are still evaluating many different approaches to fabrication and are exploring unconventional devices made possible at the nano scale. This talk will start off with a review of some "classical" crossbar structures using...

  6. Investigation of the Electrical Characteristics of Triple-Gate FinFETs and Silicon-Nanowire FETs

    Online Presentations | 08 Aug 2006 | Contributor(s):: Monica Taba, Gerhard Klimeck

    Electrical characteristics of various Fin field-effect transistors (FinFETs) and silicon-nanowires were analyzed and compared using a modified three-dimensional self-consistent quantum-mechanical simulator in order to investigate device performance. FinFETs have been proposed to fulfill the...

  7. DNA Nanowires

    Online Presentations | 06 Aug 2006 | Contributor(s):: Margarita Shalaev

    DNA is a relatively inexpensive and ubiquitous material that can be used as a scaffold for constructing nanowires. Our research focuses on the manufacturing of DNA-templated, magnetic nanowires. This is accomplished by synthesizing positively-charged metal nanoparticles that self-assemble along...

  8. Surface Analysis of Organic Monlayers Using FTIR and XPS

    Online Presentations | 02 Aug 2006 | Contributor(s):: Jamie Nipple, Michael Toole, David Janes

    Current research concerning self-assembled monolayers (SAM) focuses on the fabrication of microelectronics utilizing a semiconductor/molecule/metal junction. This study seeks to investigate various experimental techniques for creation of organic monolayers by surface analysis techniques including...

  9. A MATLAB code for Hartree Fock calculation of H-H ground state bondlength and energy using STO-4G

    Downloads | 08 Aug 2006 | Contributor(s):: Amritanshu Palaria

    Hartree Fock (HF) theory is one of the basic theories underlying the current understanding of the electronic structure of materials. It is a simple non-relativistic treatment of many electron system that accounts for the antisymmetric (fermion) nature of electronic wavefunction but does not...

  10. ECE 612 Nanoscale Transistors (Fall 2006)

    Courses | 08 Aug 2006 | Contributor(s):: Mark Lundstrom

    Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NTNanoscale Transistors is a five-week online course that develops a unified framework for understanding essential physics of nanoscale transistors, their important...

  11. ECE 612 Introductory Lecture (Fall 06)

    Online Presentations | 08 Aug 2006 | Contributor(s):: Mark Lundstrom

  12. ECE 612 Lecture 1: MOSFET Review

    Online Presentations | 08 Aug 2006 | Contributor(s):: Mark Lundstrom

  13. ECE 612 Lecture 3: 1D MOS Electrostatics

    Online Presentations | 08 Aug 2006 | Contributor(s):: Mark Lundstrom

  14. ECE 612 Lecture 2: Introduction to Device Simulation

    Online Presentations | 08 Aug 2006 | Contributor(s):: Mark Lundstrom

  15. Quantum Transport: Atom to Transistor (Spring 2004)

    Courses | 23 May 2006 | Contributor(s):: Supriyo Datta

    Spring 2004 Please Note: A newer version of this course is now available and we would greatly appreciate your feedback regarding the new format and contents. Course Information Website The development of "nanotechnology" has made it possible to engineer materials and devices...

  16. Nanotubes and Nanowires: One-dimensional Materials

    Online Presentations | 17 Jul 2006 | Contributor(s):: Timothy D. Sands

    What is a nanowire? What is a nanotube? Why are they interesting and what are their potential applications? How are they made? This presentation is intended to begin to answer these questions while introducing some fundamental concepts such as wave-particle duality, quantum confinement, the...

  17. Exploring Electron Transfer with Density Functional Theory

    Online Presentations | 11 Jun 2006 | Contributor(s):: Troy Van Voorhis

    This talk will highlight several illustrative applications of constrained density functionaltheory (DFT) to electron transfer dynamics in electronic materials. The kinetics of thesereactions are commonly expressed in terms of well known Marcus parameters (drivingforce, reorganization energy and...

  18. NanoMOS 3.0: First-Time User Guide

    Online Presentations | 06 Jun 2006 | Contributor(s):: Kurtis Cantley, Mark Lundstrom

    This tutorial is an introduction to the nanoMOS simulation tool for new users. Descriptions of input and output parameters are included, along with new features associated with the Rappture interface. There are also descriptions of nine examples that are loadable in the new version to help the...

  19. Logic Devices and Circuits on Carbon Nanotubes

    Online Presentations | 05 Apr 2006 | Contributor(s):: Joerg Appenzeller

    Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic transport at room-temperature over several hundred nanometers, high performance CN field-effect transistors...

  20. Exploring New Channel Materials for Nanoscale CMOS

    Papers | 21 May 2006 | Contributor(s):: Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices.Novel process techniques, such as ALD, high-k dielectrics,...