Tags: nanotransistors

Description

 

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

 

Resources (61-80 of 449)

  1. ECE 695A Lecture 8R: Review Questions

    Online Presentations | 01 Feb 2013 | Contributor(s):: Muhammad Alam

    What is the distinction between BTI and NBTI phenomena?What does it mean that a process is thermally activated?What is the difference between parametric failure and catastrophic failure? Give examples. What are the time-characteristics of trapping, BTI, and NBTI?Which device will have poorer NBTI...

  2. ECE 695A Lecture 7: Trapping in Pre-existing Traps

    Online Presentations | 29 Jan 2013 | Contributor(s):: Muhammad Alam

    Outline:Pre-existing vs. stress-induced trapsVoltage-shift in pre-existing bulk/interface trapsRandom Telegraph Noise, 1/f noiseConclusion

  3. ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution

    Online Presentations | 29 Jan 2013 | Contributor(s):: Muhammad Alam

    Supplemental information for Lecture 7: Trapping in Pre-existing Traps

  4. ECE 695A Lecture 7R: Review Questions

    Online Presentations | 29 Jan 2013 | Contributor(s):: Muhammad Alam

    Review Questions:Why are there more types of defects in crystals than in amorphous material?From the perspective of Maxwell’s relation, how does H reduce defect density?Why is HfO2 so defective --- and why do you want to use it?Which type of traps involve faster trapping/detrapping, Pb center or...

  5. ECE 695A Reliability Physics of Nanotransistors

    Courses | 17 Jan 2013 | Contributor(s):: Muhammad Alam

    This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a voltage is applied.

  6. ECE 695A Lecture 1: Reliability of Nanoelectronic Devices

    Online Presentations | 11 Jan 2013 | Contributor(s):: Muhammad Alam

    Outline:Evolving Landscape of ElectronicsPerformance, Variability, and ReliabilityClassification of ReliabilityCourse InformationConclusions

  7. Engineering Disorder in Opto-Electronics

    Online Presentations | 05 Dec 2012 | Contributor(s):: Jacob B. Khurgin

    GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency operation. This tremendous potential has not been fully realized yet and in this talk it will be shown...

  8. ECE 606 Lecture 25: Modern MOSFETs

    Online Presentations | 03 Dec 2012 | Contributor(s):: Gerhard Klimeck

  9. Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition

    Teaching Materials | 24 Oct 2012 | Contributor(s):: Mark Lundstrom, Xingshu Sun

    These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...

  10. nanoHUB-U NT Nanoscale Transistors: Scientific Overview

    Online Presentations | 03 Aug 2012 | Contributor(s):: Mark Lundstrom

    For details see http://nanohub.org/uNanoscale Transistors has been refined and condensed into a five-week online course that develops a unified framework for understanding essentials of nanoscale transistors without the need for admission, registration, or travel. This online course can be taken...

  11. Nanoscale Transistors: Scientific Overview

    Online Presentations | 19 Jul 2012 | Contributor(s):: Mark Lundstrom

  12. Nanoscale Transistors Lecture 1: The Most Important Invention of the 20th Century?

    Online Presentations | 19 Jul 2012 | Contributor(s):: Mark Lundstrom

  13. Nanoscale Transistors Lecture 2: IV Characteristics - traditional approach

    Online Presentations | 19 Jul 2012 | Contributor(s):: Mark Lundstrom

  14. Nanoscale Transistors Lecture 3: Controlling Current by Modulating a Barrier

    Online Presentations | 19 Jul 2012 | Contributor(s):: Mark Lundstrom

  15. Nanoscale Transistors Lecture 4: MOS Electrostatics

    Online Presentations | 19 Jul 2012 | Contributor(s):: Mark Lundstrom

  16. Nanoscale Transistors Lecture 5: Transport - ballistic, diffusive, non-local, and quantum

    Online Presentations | 19 Jul 2012 | Contributor(s):: Mark Lundstrom

  17. Nanoscale Transistors Lecture 6: Ballistic Model

    Online Presentations | 19 Jul 2012 | Contributor(s):: Mark Lundstrom

  18. Nanoscale Transistors Lecture 7: Comparison to Experimental Results

    Online Presentations | 19 Jul 2012 | Contributor(s):: Mark Lundstrom

  19. Nanoscale Transistors Lecture 8: Connection to Traditional Model

    Online Presentations | 19 Jul 2012 | Contributor(s):: Mark Lundstrom

  20. Nanoscale Transistors Lecture 9: Scattering and Transmission

    Online Presentations | 19 Jul 2012 | Contributor(s):: Mark Lundstrom