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ECE 612 Lecture 9: Subthreshold Conduction
Online Presentations | 25 Jan 2014 | Contributor(s):: Mark Lundstrom
Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.
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ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances
Online Presentations | 25 Jan 2014 | Contributor(s):: Mark Lundstrom
Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.
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Tunnel FETs - Device Physics and Realizations
Online Presentations | 10 Jul 2013 | Contributor(s):: Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.
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The Road Ahead for Carbon Nanotube Transistors
Online Presentations | 09 Jul 2013 | Contributor(s):: Aaron Franklin
In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to realizing a nanotube-driven digital technology will be covered.
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ECE 695A Lecture 18: DC-IV and Charge Pumping Methods
Online Presentations | 25 Feb 2013 | Contributor(s):: Muhammad Alam
Outline:Recall: Properties of Interface DefectsFlux-based method 1: Direct Current-Voltage methodFlux-based method 2: Charge pumping methodConclusions
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ECE 695A Lecture 16: Review Questions
Online Presentations | 22 Feb 2013 | Contributor(s):: Muhammad Alam
Review QuestionWhat is the difference between hot atom dissociation vs. cold atom dissociation?.Many experiments are reported at 77K and 295K. Why these temperatures?.Why is there such a big difference between VT degradation and NIT degradation?.Impact ionization threshold is significantly larger...
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ECE 695A Lecture 17: Subthreshold and Idlin Methods
Online Presentations | 21 Feb 2013 | Contributor(s):: Muhammad Alam
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ECE 695A Lecture 15R: Review Questions
Online Presentations | 20 Feb 2013 | Contributor(s):: Muhammad Alam
Review Questions:Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI?What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments. Will universality hold of SiH and SiO bond dissociation occur in equal proportion?Do you expect NBTI to be...
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ECE 695A Lecture 14a: Voltage Dependent HCI I
Online Presentations | 19 Feb 2013 | Contributor(s):: Muhammad Alam
Outline:Background and Empirical ObservationsTheory of Hot Carriers: Hydrodynamic ModelTheory of Hot Carriers: Monte Carlo ModelTheory of Hot Carriers: Universal ScalingConclusionAppendices
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ECE 695A Lecture 14b: Voltage Dependent HCI II
Online Presentations | 19 Feb 2013 | Contributor(s):: Muhammad Alam
Outline:Background and Empirical ObservationsTheory of Hot Carriers: Hydrodynamic ModelTheory of Hot Carriers: Monte Carlo ModelTheory of Hot Carriers: Universal ScalingConclusionAppendices
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ECE 695A Lecture 14R: Review Questions
Online Presentations | 19 Feb 2013 | Contributor(s):: Muhammad Alam
Review QuestionsWhy is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current?What are the three methods of HCI voltage acceleration?If theory of universal scaling is so good, why not use it all the time? (Hint: Think...
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ECE 695A Lecture 15: Off-state HCI Degradation
Online Presentations | 19 Feb 2013 | Contributor(s):: Muhammad Alam
Outline:ON vs. OFF State HCI DegradationOrigin of hot carriers at off-stateSiH vs. SiO – who is getting broken? Voltage acceleration factors by scalingConclusions
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ECE 695A Lecture 16: Temperature Dependence of HCI
Online Presentations | 19 Feb 2013 | Contributor(s):: Muhammad Alam
Outline:Empirical observations regarding HCITheory of bond dissociation: MVE vs. RRKHot carrier dissociation of SiH bondsHot carrier dissociation of SiO bondsConclusions
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ECE 695A Lecture 13: Introductory Lecture on HCI Degradation
Online Presentations | 19 Feb 2013 | Contributor(s):: Muhammad Alam
Outline:Background and features of HCI DegradationPhenomenological observationsOrigin of Hot carriersTheory of Si-H Bond DissociationTheory of Si-O Bond DissociationConclusions
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ECE 695A Lecture 13R: Review Questions
Online Presentations | 19 Feb 2013 | Contributor(s):: Muhammad Alam
Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the universal...
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ECE 695A Lecture 5R: Review Questions
Online Presentations | 12 Feb 2013 | Contributor(s):: Muhammad Alam
Review Questions:What is the difference between coordination and composition?Is periodicity essential for a defect-free structure?Why can’t the amorphous material have arbitrary ring distribution?How does Temperature enter in Maxwell’s relationship?Do you expect more or less defect for...
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ECE 695A Lecture 11R: Review Questions
Online Presentations | 08 Feb 2013 | Contributor(s):: Muhammad Alam
Review Questions:Does Einstein relationship hold for activated diffusion?People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you support the argument?What assumption did I make regarding diffusion of H in SiO2 that makes the derivation...
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ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation
Online Presentations | 08 Feb 2013 | Contributor(s):: Muhammad Alam
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ECE 695A Lecture 12: Field Dependence of NBTI
Online Presentations | 08 Feb 2013 | Contributor(s):: Muhammad Alam
Outline:Background: Field dependent degradationComponents of field-dependent dissociation:Interpreting experimentsVoltage acceleration factorsConclusion
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ECE 695A Lecture 12R: Review Questions
Online Presentations | 08 Feb 2013 | Contributor(s):: Muhammad Alam
Review Questions:Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength.How does the dissociation process becomes non-Arrhenius?Do you think the diffusion and repassivation will also become non-Arrhenius when...