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BJT Lab Worked Out Problem 1
01 Feb 2011 | Contributor(s):: Saumitra Raj Mehrotra
This sample worked out problem analyzes the output characteristic curves of an npn BJT transistor and extracts the relevant parameters.
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Boltzmann Transport Equation and Scattering Theory
Teaching Materials | 01 Feb 2011 | Contributor(s):: Dragica Vasileska
In this presentation we give simple derivation of the Boltzmann transport equation, describe the derivation of Fermi's Golden Rule, and present the derivation of most common scattering mechanisms in semiconductors.
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BJT Lab - Amplifier
Teaching Materials | 31 Jan 2011 | Contributor(s):: Saumitra Raj Mehrotra
This real life problem designs and calculates the AC amplification ratio for a Common-Emitter configuration npn type BJT.
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OMEN Nanowire Homework Problems
Teaching Materials | 24 Jan 2011 | Contributor(s):: SungGeun Kim
OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework problems and find the answers to them.
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OMEN Nanowire Test Problems
Teaching Materials | 24 Jan 2011 | Contributor(s):: SungGeun Kim
This test is for students who have gone through the OMEN Nanowire first-time user guide and other learning materials related to nanowire FETs.
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MOSCAP CV profiling
Teaching Materials | 05 Jan 2011 | Contributor(s):: Saumitra Raj Mehrotra
This real life problem based on MOSCAP allows one to understand the usage of CV profiling of MOS type of devices.
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MOSFET Lab - Scaling
Teaching Materials | 03 Jan 2011 | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska
The concept of device scaling and the need to control short channel effects is used in this real life problem
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MOSFET Design Calculations - Step 1
Teaching Materials | 02 Jan 2011 | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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PN Junctions: Simulation and Calculation of Electrostatic Variables
Teaching Materials | 02 Jan 2011 | Contributor(s):: Stella Quinones
Homework assignment that combines basic PN junction electrostatic variable calculations (Vbi, Xn, Xp and Emax) with the simulation of PN junctions for 2 sets of doping conditions. Both forward and reverse bias conditions are simulated. This homework assignment is designed for junior level...
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MOSFET Design Calculations - Step 1 (Instructor Copy)
Teaching Materials | 02 Jan 2011 | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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PN Junctions: Simulations and Calculations of Electrostatic Variables (Instructor Copy)
Teaching Materials | 02 Jan 2011 | Contributor(s):: Stella Quinones
Homework assignment that combines basic PN junction electrostatic variable calculations (Vbi, Xn, Xp and Emax) with the simulation of PN junctions for 2 sets of doping conditions. Both forward and reverse bias conditions are simulated. This homework assignment is designed for junior level...
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MOSFET Design Calculations - Step 2
Teaching Materials | 02 Jan 2011 | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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MOSFET Design Calculations - Step 2 (Instructor Copy)
Teaching Materials | 02 Jan 2011 | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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MOSFET Worked out problems 1
Teaching Materials | 06 Dec 2010 | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.
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A methodology for SPICE-compatible modeling of nanoMOSFETs
Teaching Materials | 17 Nov 2010 | Contributor(s):: Alba Graciela Avila, David Espejo
An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation (CLM), Threshold Voltage variation and Velocity saturation, and is the first in his class that is not...
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Quantum dot - Design a laser
Teaching Materials | 09 Nov 2010 | Contributor(s):: SungGeun Kim
This document is a real-life problem for the quantum dot lab tool. Basic knowledge on the operation principle of a quantum dot laser is needed to solve this test. The test requires the tested person to be familar with the quantum dot lab tool.
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Test for Quantum Dot Lab tool
Teaching Materials | 09 Nov 2010 | Contributor(s):: SungGeun Kim, Saumitra Raj Mehrotra
This test is aimed at self-learning students or instructors who may be engaged in teaching classes related to the quantum dot lab tool.The level of this test should not be difficult for a student who has gone through "the general tutorial to quantum dots,""the introductory tutorial to the quantum...
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ABACUS: Test for MOSFET Tool
Teaching Materials | 18 Oct 2010 | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...
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Verification of the Validity of the MOSFET Tool
Teaching Materials | 11 Oct 2010 | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the analytical model. MATLAB script used for verification is also available for download.
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Rappturizer
Teaching Materials | 06 Oct 2010 | Contributor(s):: David Alberto Saenz
This resource is a program which helps to build simple rappture applications. The user will just have to input the information about their code and a template and XML file will be automatically generated for the user to just copy/paste his calculations and let the template do the rest. A detailed...