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Tags: multiscale models

Nanotechnology sometimes involves mixing something very small into a larger, more conventional system. For example, mixing carbon nanotubes into a conventional polymer gives it added strength. Or, using a carbon nanotube as the channel between two larger, source-drain contacts creates a transistor with improved channel mobility. But simulating such systems becomes a huge challenge. The smaller parts of the system must be solved with great accuracy—for example, by simulating each atom within a carbon nanotube. But the same approach can't possibly be applied to the larger system—for example, to each atom in the thousands of polymer molecules in a realistic sample—or the whole problem would be too big to solve!

Multi-scale methods attempt to solve the problem by stitching together smaller domains (where atomistic models apply) and larger domains (where continuum models apply) into a coherent solution.

Learn more about multi-scale methods from the resources on this site, listed below.

Resources

Online Presentations

  • 10.0 Ranking Liu: Nano-Scale Device Simulations ...

    Nano-Scale Device Simulations Using PROPHET

    Type Online Presentations
    Contributor(s) Yang Liu, Robert Dutton, Yang Liu
    Date 22 Jan. 2006
    Avg. Rating 5.0 out of 5 stars  (2)
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    These two lectures are aimed to give a practical guide to the use of a general device simulator (PROPHET) available on nanoHUB. PROPHET is a partial differential equation (PDE) solver that offers users the flexibility of integrating new models and equations for their nano-device simulations. ...

  • 10.0 Ranking Fisher: Understanding Phonon Dynamics via ...

    Understanding Phonon Dynamics via 1D Atomic Chains

    Type Online Presentations
    Contributor(s) Timothy S Fisher
    Date 28 Aug. 2006
    Avg. Rating 0.0 out of 5 stars  (0)
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    Phonons are the principal carriers of thermal energy in semiconductors and insulators, and they serve a vital role in dissipating heat produced by scattered electrons in semiconductor devices. Despite the importance of phonons, rigorous understanding and inclusion of phonon dynamics in simulations ...

  • 10.0 Ranking Liu: Nano-Scale Device Simulations ...

    Nano-Scale Device Simulations Using PROPHET-Part I: Basics

    Type Online Presentations
    Contributor(s) Yang Liu, Robert Dutton
    Date 22 Jan. 2006
    Avg. Rating 5.0 out of 5 stars  (2)
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    Part I covers the basics of PROPHET, including the set-up of simulation structures and parameters based on pre-defined PDE systems.

  • 9.8 Ranking Alam: The Long and Short of Pick-up ...

    The Long and Short of Pick-up Stick Transistors: A Promising Technology for Nano- and Macro-Electronics

    Type Online Presentations
    Contributor(s) Muhammad A. Alam
    Date 11 Apr. 2006
    Avg. Rating 5.0 out of 5 stars  (6)
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    In recent years, there has been enormous interest in fabricating thin-film transistors on flexible substrates in the emerging field of large-area macro-electronics. Applications include displays, e- paper, e-clothing, pressure-sensitive skin, large-area chemical and biological sensors, flexible ...

  • 9.8 Ranking Strachan: First Principles-based Atomistic ...

    First Principles-based Atomistic and Mesoscale Modeling of Materials

    Type Online Presentations
    Contributor(s) Alejandro Strachan
    Date 16 Nov. 2005
    Avg. Rating 5.0 out of 5 stars  (6)
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    The quantitativelly accurate prediction of materials behavior from first principles requires the chracterization of a wide range of phenomena with disparate temporal and spatial scales form electrons and atoms to devices. No single theory of computational model can capture all these phenomena ...

  • 9.7 Ranking Klimeck: Bandstructure in Nanoelectronics

    Bandstructure in Nanoelectronics

    Type Online Presentations
    Contributor(s) Gerhard Klimeck
    Date 01 Nov. 2005
    Avg. Rating 5.0 out of 5 stars  (5)
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    Electrical Engineering curricula typically only touch the bandstructure of solids early in the introduction of solid state devices. Critical parameters such as bandedges, effective masses and degeneracies are extracted from the bandstructure and the atomistic details of the origin of the abstract ...

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Publications

  • 10.0 Ranking Guo: Towards Multi-Scale Modeling of ...

    Towards Multi-Scale Modeling of Carbon Nanotube Transistors

    Type Publications
    Contributor(s) Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram
    Date 21 Sep. 2006
    Avg. Rating 0.0 out of 5 stars  (0)
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    Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon ...

Downloads

  • 7.4 Ranking Ren: NanoMOS 2.5 Source Code Download

    NanoMOS 2.5 Source Code Download

    Type Downloads
    Contributor(s) Zhibin Ren, Sebastien Goasguen
    Date 22 Feb. 2005
    Avg. Rating 4.5 out of 5 stars  (2)
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    NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the ...

Workshops

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