Tags: Mosfets
Resources
Tools
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6.7 Ranking Kim: MuGFET
MuGFET
Type Tools Contributor(s) SungGeun Kim, Gerhard Klimeck, Sriraman Damodaran, Ben Haley Date 01 May. 2008 Avg. Rating (0) Rate this Simulate the multi-gate FET structure (finFET and nanowire) using Drift-Diffusion-based codes
Courses
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1.0 Ranking Lundstrom: ECE 612: Nanoscale Transistors ...
ECE 612: Nanoscale Transistors (Fall 2008)
Type Courses Contributor(s) Mark Lundstrom Date 27 Aug. 2008 Avg. Rating (0) Rate this This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 treats silicon MOS and MOSFET fundamentals as well as ...
Teaching Materials
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10.0 Ranking Klimeck: Semiconductor Device Education ...
Semiconductor Device Education Material
Type Teaching Materials Contributor(s) Gerhard Klimeck Date 28 Jan. 2008 Avg. Rating (2) Rate this When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are built from components such as transistors, capacitors, ...
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10.0 Ranking Lundstrom: Notes on the Solution of the ...
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs
Type Teaching Materials Contributor(s) Mark Lundstrom Date 27 Aug. 2008 Avg. Rating (0) Rate this These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics ...
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5.1 Ranking Ferry: MOSfet Homework Assignment - Role ...
MOSfet Homework Assignment - Role of Dielectric Constant and Thickness
Type Teaching Materials Contributor(s) David K. Ferry Date 31 Jan. 2008 Avg. Rating (0) Rate this Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters: Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes), poly-Si gate, junction depth of 10 nm (20 nodes), and all other parameters at their nominal preset values. Now, change K to 20, and ...
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