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Ivan C R nascimento
https://nanohub.org/members/121504
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Himanshu Rai
https://nanohub.org/members/117669
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Convergence problem, take smaller steps
Q&A|Closed | Responses: 0
I receive this error when running the MOSFET tool. Any one can suggest a solution
https://nanohub.org/answers/question/1488
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The MVS Nanotransistor Model: A Primer
Online Presentations | 26 Nov 2014 | Contributor(s):: Mark Lundstrom
In this talk, I will present a gentle introduction to the MVS model. I’ll show how the basic equations of the model can be obtained by using a traditional approach to MOSFETs. I’ll then indicate how the parameters in this traditional model must be re-interpreted in order to capture...
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Basics of Compact Model Development
Online Presentations | 02 Aug 2014 | Contributor(s):: Sivakumar P Mudanai
This tutorial is aimed at developing an understanding of what a compact model is, the need and role of compact models in the semiconductor industry and the requirements that a compact model must meet for acceptable use in circuit simulations. The tutorial will use simple examples from planar...
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Models for SETs in PSpice
Q&A|Closed | Responses: 0
Hello. I am trying to simulate hybrid circuits (cMOS SET transistors) and I can't find models for SET, anywhere... I only want a SET that can simulate properly along with regular...
https://nanohub.org/answers/question/1399
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MOSFET Simulation
Tools | 04 Oct 2013 | Contributor(s):: Chen Shang, Sankarsh Ramadas, Tanya Faltens, derrick kearney, Krishna Madhavan
Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.
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Al Key
Technology refresh
https://nanohub.org/members/89988
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Tunnel FETs - Device Physics and Realizations
Online Presentations | 27 Jun 2013 | Contributor(s):: Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.
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Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
Papers | 25 Jun 2013 | Contributor(s):: Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...
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III-V Nanoscale MOSFETS: Physics, Modeling, and Design
Papers | 25 Jun 2013 | Contributor(s):: Yang Liu
As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...
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Computational and Experimental Study of Transport in Advanced Silicon Devices
Papers | 27 Jun 2013 | Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...
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Exploring New Channel Materials for Nanoscale CMOS
Papers | 27 Jun 2013 | Contributor(s):: Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-# dielectrics, and...
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Nanoscale MOSFETS: Physics, Simulation and Design
Papers | 27 Jun 2013 | Contributor(s):: Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...
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Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
Papers | 27 Jun 2013 | Contributor(s):: Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...
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Mohamed Tarek Ghoneim
Keywords: device physics, flexible electronics, nanotechnology, graphene, nonvolatile memory, reliability, CMOS, physical and electrical characterization, emerging devices, power management, VLSI,...
https://nanohub.org/members/77955
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ECE 695A Lecture 9R: Review Questions
Online Presentations | 07 Feb 2013 | Contributor(s):: Muhammad Alam
Review Questions:Does NBTI power-exponent depend on voltage or temperature?Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?How does one know that the diffusing species is neutral?How would the time-exponent different for a surround gate MOSFET vs. planar...
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ECE 606 Lecture 27: Looking Back and Looking Forward
Online Presentations | 20 Dec 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 25: Modern MOSFETs
Online Presentations | 03 Dec 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics
Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck