Tags: MOSFET

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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

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  1. Ivan C R nascimento

    https://nanohub.org/members/121504

  2. Himanshu Rai

    https://nanohub.org/members/117669

  3. Convergence problem, take smaller steps

    Q&A|Closed | Responses: 0

    I receive this error when running the MOSFET tool. Any one can suggest a solution

    https://nanohub.org/answers/question/1488

  4. The MVS Nanotransistor Model: A Primer

    Online Presentations | 26 Nov 2014 | Contributor(s):: Mark Lundstrom

    In this talk, I will present a gentle introduction to the MVS model. I’ll show how the basic equations of the model can be obtained by using a traditional approach to MOSFETs. I’ll then indicate how the parameters in this traditional model must be re-interpreted in order to capture...

  5. Basics of Compact Model Development

    Online Presentations | 02 Aug 2014 | Contributor(s):: Sivakumar P Mudanai

    This tutorial is aimed at developing an understanding of what a compact model is, the need and role of compact models in the semiconductor industry and the requirements that a compact model must meet for acceptable use in circuit simulations. The tutorial will use simple examples from planar...

  6. Models for SETs in PSpice

    Q&A|Closed | Responses: 0

      Hello. I am trying to simulate hybrid circuits (cMOS SET transistors) and I can't find models for SET, anywhere... I only want a SET that can simulate properly along with regular...

    https://nanohub.org/answers/question/1399

  7. MOSFET Simulation

    Tools | 04 Oct 2013 | Contributor(s):: Chen Shang, Sankarsh Ramadas, Tanya Faltens, derrick kearney, Krishna Madhavan

    Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

  8. Al Key

    Technology refresh

    https://nanohub.org/members/89988

  9. Tunnel FETs - Device Physics and Realizations

    Online Presentations | 27 Jun 2013 | Contributor(s):: Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.

  10. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    Papers | 25 Jun 2013 | Contributor(s):: Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...

  11. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    Papers | 25 Jun 2013 | Contributor(s):: Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...

  12. Computational and Experimental Study of Transport in Advanced Silicon Devices

    Papers | 27 Jun 2013 | Contributor(s):: Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

  13. Exploring New Channel Materials for Nanoscale CMOS

    Papers | 27 Jun 2013 | Contributor(s):: Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-# dielectrics, and...

  14. Nanoscale MOSFETS: Physics, Simulation and Design

    Papers | 27 Jun 2013 | Contributor(s):: Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...

  15. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    Papers | 27 Jun 2013 | Contributor(s):: Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...

  16. Mohamed Tarek Ghoneim

    Keywords: device physics, flexible electronics, nanotechnology, graphene, nonvolatile memory, reliability, CMOS, physical and electrical characterization, emerging devices, power management, VLSI,...

    https://nanohub.org/members/77955

  17. ECE 695A Lecture 9R: Review Questions

    Online Presentations | 07 Feb 2013 | Contributor(s):: Muhammad Alam

    Review Questions:Does NBTI power-exponent depend on voltage or temperature?Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?How does one know that the diffusing species is neutral?How would the time-exponent different for a surround gate MOSFET vs. planar...

  18. ECE 606 Lecture 27: Looking Back and Looking Forward

    Online Presentations | 20 Dec 2012 | Contributor(s):: Gerhard Klimeck

  19. ECE 606 Lecture 25: Modern MOSFETs

    Online Presentations | 03 Dec 2012 | Contributor(s):: Gerhard Klimeck

  20. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    Online Presentations | 26 Nov 2012 | Contributor(s):: Gerhard Klimeck