Tags: MOSFET

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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

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  1. Abdelaali Fargi

    Abdelaali Fargi received his PhD in Physics of Semiconductor Devices and Electronics from Faculty of Sciences of Monastir (Tunisia) in 2016, the Master of Science Degree in Materials Science and...

    https://nanohub.org/members/56303

  2. MOSFET Lab Exercise: Series Resistance and Transistor Breakdown

    13 Jul 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise is supposed to teach the students the role of the source and drain resistance on device output characteristics. The second portion of the assignment is supposed to train students how to simulate MOSFET operation near transistor breakdown.

  3. MOSFet Learning Materials

    Wiki

    By completing the MOSFET Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to understand a) the operation of MOSFET devices, b) the...

    https://nanohub.org/wiki/MOSFETLabPage

  4. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

    Online Presentations | 11 May 2011 | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...

  5. simulation does not give any result

    Q&A|Closed | Responses: 0

    I simulated a n-type mosfet with following settings: device type mosfet n-type gaussian S/D doping density

    source/drain length: 50nm source/drain nodes: 15
    channel length: 35 https://nanohub.org/answers/question/771

  6. FETToy

    Tools | 14 Feb 2006 | Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

    Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

  7. Onkar Shrinivas Bhende

    https://nanohub.org/members/52322

  8. OMEN Nanowire Homework Problems

    Teaching Materials | 23 Jan 2011 | Contributor(s):: SungGeun Kim

    OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework problems and find the answers to them.

  9. MOSFET Lab - Scaling

    Teaching Materials | 02 Jan 2011 | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska

    The concept of device scaling and the need to control short channel effects is used in this real life problem

  10. MOSFET Design Calculations - Step 1

    Teaching Materials | 30 Dec 2010 | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  11. MOSFET Design Calculations - Step 1 (Instructor Copy)

    Teaching Materials | 30 Dec 2010 | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  12. MOSFET Design Calculations - Step 2

    Teaching Materials | 31 Dec 2010 | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  13. MOSFET Design Calculations - Step 2 (Instructor Copy)

    Teaching Materials | 31 Dec 2010 | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  14. How to see the occupation of electrons with strain

    Q&A|Closed | Responses: 1

    How do I witness the variation of occupancies of electrons in the 6 conduction band minima’s with the applied strain. Can anyone suggest me the good simulation tool for the same.

    https://nanohub.org/answers/question/675

  15. MOSFET Worked out problems 1

    Teaching Materials | 06 Dec 2010 | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck

    Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.

  16. A methodology for SPICE-compatible modeling of nanoMOSFETs

    Teaching Materials | 17 Nov 2010 | Contributor(s):: Alba Graciela Avila, David Espejo

    An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation (CLM), Threshold Voltage variation and Velocity saturation, and is the first in his class that is not...

  17. ABACUS: Test for MOSFET Tool

    Teaching Materials | 17 Oct 2010 | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...

  18. Verification of the Validity of the MOSFET Tool

    Teaching Materials | 10 Oct 2010 | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the analytical model. MATLAB script used for verification is also available for download.

  19. Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics

    Online Presentations | 19 Jul 2010 | Contributor(s):: Krishna Shenai

    This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging silicon and wide bandgap materials and power devices, heterogeneous chip-scale power integration,...

  20. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    Online Presentations | 08 Jul 2010 | Contributor(s):: Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..Learning Objectives:GNR TFET Simulation pz Tight-Binding Orbital Model 3D Schrödinger-Poisson Solver Device Simulation Structure Optimization (Doping, Lg, VDD) LER => Localized Band Gap States LER =>...