Tags: MOSFET

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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Resources (61-80 of 153)

  1. Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities

    Online Presentations | 19 Jul 2012 | Contributor(s):: Mark Lundstrom

  2. MOSFET Design Calculations - Step 3

    Teaching Materials | 01 Apr 2012 | Contributor(s):: Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  3. MOSFET Design Calculations - Step 3 (Instructor Copy)

    Teaching Materials | 01 Apr 2012 | Contributor(s):: Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  4. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

    Online Presentations | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra

  5. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

    Online Presentations | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...

  6. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

    Online Presentations | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  7. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

    Courses | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  8. MOSFET Design Simulation I

    Teaching Materials | 07 Mar 2012 | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  9. MOSFET Design Simulation I (Instructor Copy)

    Teaching Materials | 07 Mar 2012 | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  10. MOSFET Design Calculations - Step 2 (Instructor Copy)

    Teaching Materials | 05 Mar 2012 | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  11. MOSFET Design Calculations - Step 2

    Teaching Materials | 05 Mar 2012 | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  12. Silvaco Athena - Part 3

    Teaching Materials | 09 Aug 2011 | Contributor(s):: Dragica Vasileska

    This set of slides describes the fabrication of 100 nm channel length MOSFET device. At the end the formation of Bird's Beaks is discussed.

  13. MOSFET Lab Exercise: Series Resistance and Transistor Breakdown

    Teaching Materials | 13 Jul 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise is supposed to teach the students the role of the source and drain resistance on device output characteristics. The second portion of the assignment is supposed to train students how to simulate MOSFET operation near transistor breakdown.

  14. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

    Online Presentations | 11 May 2011 | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...

  15. FETToy

    Tools | 14 Feb 2006 | Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

    Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

  16. OMEN Nanowire Homework Problems

    Teaching Materials | 23 Jan 2011 | Contributor(s):: SungGeun Kim

    OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework problems and find the answers to them.

  17. MOSFET Lab - Scaling

    Teaching Materials | 02 Jan 2011 | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska

    The concept of device scaling and the need to control short channel effects is used in this real life problem

  18. MOSFET Design Calculations - Step 1

    Teaching Materials | 30 Dec 2010 | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  19. MOSFET Design Calculations - Step 1 (Instructor Copy)

    Teaching Materials | 30 Dec 2010 | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...

  20. MOSFET Design Calculations - Step 2

    Teaching Materials | 31 Dec 2010 | Contributor(s):: Stella Quinones, Jose Valdez

    A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...