Tags: MOSFET

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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Online Presentations (1-20 of 78)

  1. Essential Physics of the Ultimate MOSFET and the Next 20 Years of Semiconductor Technology

    Online Presentations | 18 Mar 2024 | Contributor(s):: Mark Lundstrom

    My goal in this talk is to discuss the operation of these devices in a simple but physically sound way. A broader goal of my talk is to discuss how semiconductor technology will meet the insatiable appetite that artificial intelligence has for more computing, more memory, and faster communication.

  2. Perspectives on Ion-Induced Power Device Burnout in Space

    Online Presentations | 02 Nov 2023 | Contributor(s):: Kenneth F. Galloway, Scooter Ball

  3. Modeling Radiation Effects from the Component Level to the System Level

    Online Presentations | 24 Oct 2023 | Contributor(s):: Ronald Schrimpf

  4. ABACUS Tool Suite and MOS Capacitors (Fall 2023)

    Online Presentations | 19 Oct 2023 | Contributor(s):: Gerhard Klimeck

    In the sixth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip

  5. ABACUS Tool Suite and MOSFETs (Fall 2023)

    Online Presentations | 19 Oct 2023 | Contributor(s):: Gerhard Klimeck

    In the seventh session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the MOSFET Lab. Students can experiment with the classical scaling of a traditional 2D MOSFET.

  6. ECE 606 L2.3: Materials - Atomic Positions and Bond Orientations

    Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

  7. ECE 606 L30.1: MOSFET Introduction - Sub-Threshold (Depletion) Current

    Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

  8. ECE 606 L30.2: MOSFET Introduction - Above-Threshold, Inversion Current

    Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

  9. ECE 606 L30.3: MOSFET Introduction - Velocity Saturation in Simplified Theory

    Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

  10. ECE 606 L30.4: MOSFET Introduction - Comments on Bulk Charge Theory & Small Transistors

    Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

  11. ECE 606 L31.1: MOSFET Non-Idealities - Flat Band Voltage - What Is It and How to Measure It?

    Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

  12. ECE 606 L31.2: MOSFET Non-Idealities - Threshold Voltage Shift Due to Trapped Charges

    Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

  13. ECE 606 L31.3: MOSFET Non-Idealities - Physics of Interface Traps

    Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

  14. ECE 606 L32.1: Modern MOSFET - Some of Moore's Law Challenges

    Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

  15. ECE 606 L32.2: Modern MOSFET - Short Channel Effect

    Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

  16. ECE 606 L32.3: Modern MOSFET - Control of Threshold Voltage

    Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

  17. ECE 606 L32.4: Modern MOSFET - Mobility Enhancement

    Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck

  18. From Apollo to Apple: How a Purdue Alum, Mohamed Atalla, Started Moore's Law and Transformed the World

    Online Presentations | 02 Feb 2023 | Contributor(s):: Muhammad A. Alam

    The Silicon MOSFET, a better transistor. Demonstration of the 1960 silicon MOSFET (metal-oxide-semiconductor field-effect transistor), the mainstay of today’s electronics, which was co-invented by Purdue alumnus Mohamed M. Atalla at Bell Labs.

  19. ABACUS MOSFETs (Spring 2022)

    Online Presentations | 24 Jun 2022 | Contributor(s):: Gerhard Klimeck

    In the seventh session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOSFET Lab. Students can experiment with the classical scaling of a traditional 2D MOSFET....

  20. ABACUS MOS Capacitors (Spring 2022)

    Online Presentations | 08 Jun 2022 | Contributor(s):: Gerhard Klimeck

    In the sixth session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip...