Tags: MOSFET

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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Online Presentations (41-60 of 78)

  1. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

    Online Presentations | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...

  2. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

    Online Presentations | 28 Mar 2012 | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  3. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

    Online Presentations | 11 May 2011 | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...

  4. Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics

    Online Presentations | 22 Sep 2010 | Contributor(s):: Krishna Shenai

    This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging silicon and wide bandgap materials and power devices, heterogeneous chip-scale power integration,...

  5. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    Online Presentations | 05 Aug 2010 | Contributor(s):: Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..Learning Objectives:GNR TFET Simulation pz Tight-Binding Orbital Model 3D Schrödinger-Poisson Solver Device Simulation Structure Optimization (Doping, Lg, VDD) LER => Localized Band Gap States LER =>...

  6. Lecture 1b: Nanotransistors - A Bottom Up View

    Online Presentations | 20 Jul 2010 | Contributor(s):: Mark Lundstrom

    MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for communications. In this lecture, I will present a simple, physical model for the nanoscale...

  7. Illinois ECE 440 Solid State Electronic Devices, Lecture 34: MOS Field Effect Transistor (FET)

    Online Presentations | 02 Mar 2010 | Contributor(s):: Eric Pop

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  8. Illinois ECE 440 Solid State Electronic Devices, Lecture 35: Short Channel MOSFET and Non-Ideal Behavior

    Online Presentations | 02 Mar 2010 | Contributor(s):: Eric Pop

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  9. Illinois ECE 440 Solid State Electronic Devices, Lecture 36: MOSFET Scaling Limits

    Online Presentations | 02 Mar 2010 | Contributor(s):: Eric Pop

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  10. Illinois ECE 440 Solid State Electronic Devices, Lecture 37: MOSFET Analog Amplifier and Digital Inverter

    Online Presentations | 02 Mar 2010 | Contributor(s):: Eric Pop

  11. Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance

    Online Presentations | 02 Mar 2010 | Contributor(s):: Eric Pop

  12. ECE 606 Lecture 38: Modern MOSFET

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    Online Presentations | 07 May 2009 | Contributor(s):: Muhammad A. Alam

  13. ECE 606 Lecture 40: Looking Back and Looking Forward

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    Online Presentations | 30 Apr 2009

  14. ECE 606 Lecture 37b: Nonideal Effects in MOSFET II

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    Online Presentations | 28 Apr 2009 | Contributor(s):: Muhammad A. Alam

  15. ECE 606 Lecture 36: MOSFET I-V Characteristics II

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    Online Presentations | 28 Apr 2009 | Contributor(s):: Muhammad A. Alam

  16. ECE 606 Lecture 37a: Nonideal Effects in MOSFET I

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    Online Presentations | 28 Apr 2009 | Contributor(s):: Muhammad A. Alam

  17. ECE 606 Lecture 35: MOSFET I-V Characteristics I

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    Online Presentations | 16 Apr 2009 | Contributor(s):: Muhammad A. Alam

  18. ECE 612 Lecture 26: Heterostructure FETs

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    Online Presentations | 10 Dec 2008 | Contributor(s):: Mark Lundstrom

    Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.

  19. ECE 612 Lecture 18B: CMOS Process Flow

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    Online Presentations | 18 Nov 2008 | Contributor(s):: Mark Lundstrom

    For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.This lecture is a condensed version of the more complete presentation (listed above) by Dr. Fuller.

  20. ECE 612 Lecture 18A: CMOS Process Steps

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    Online Presentations | 12 Nov 2008 | Contributor(s):: Mark Lundstrom

    Outline: 1) Unit Process Operations,2) Process Variations.