Tags: MOSFET

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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Downloads (1-8 of 8)

  1. A Matlab 2D-Poisson-drift-diffusion simulator for semiconductor devices

    Downloads | 04 Mar 2024 | Contributor(s):: Chien-Ting Tung

    A Matlab 2D-Poisson-Drift-Diffusion solver for simple MOSFETs. It uses finite difference method, Slotboom variable, and Gummel iteration.Boltzmann statistics and velocity saturation is considered. 

  2. Windows based Interactive tool for the simulation of the MOS electrostatics

    Downloads | 26 Jun 2019 | Contributor(s):: Biswajeet Sahoo

    This is a tool to simulate the MOS electrostatics. It includes the simulation of  2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...

  3. Windows based Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes

    Downloads | 26 Jun 2019 | Contributor(s):: Biswajeet Sahoo

    This is a tool to simulate the MOS electrostatics. It includes the simulation of  2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...

  4. Ubuntu based Interactive tool for the simulation of the MOS electrostatics

    Downloads | 26 Jun 2019 | Contributor(s):: Biswajeet Sahoo

    This is a tool to simulate the MOS electrostatics. It includes the simulation of  2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work under...

  5. MATLAB: Negative Capacitance (NC) FET Model

    Downloads | 05 Dec 2015 | Contributor(s):: Muhammad Abdul Wahab, Muhammad A. Alam

    MATLAB model that calculates the Q-V, C-V, and I-V characteristics of the conventional MOSFET and NC-FET.

  6. ECE 539 Report: Study of two-dimensional Shrodinger-Poisson Solver

    Downloads | 01 Jun 2009 | Contributor(s):: Fawad Hassan

    We solve the 2-Dimensional Shrodinger-Poisson system of equations using a self consistent scheme (like Gummel Iteration). We study a double gate Silicon Mosfet oriented in the 100 direction using the above setup. We assume a simple 6-valley bandstructure for Silicon.

  7. MOSCNT: code for carbon nanotube transistor simulation

    3.5 out of 5 stars 

    Downloads | 14 Nov 2006 | Contributor(s):: Siyu Koswatta, Jing Guo, Dmitri Nikonov

    Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that...

  8. FETToy 2.0 Source Code Download

    3.5 out of 5 stars 

    Downloads | 09 Mar 2005

    FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs, FETToy assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a...