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Tags: MOSFET

Resources

Tools

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Online Presentations

  • 10.0 Ranking Hersam: MSE 376 Lecture 12: Nanoscale ...

    MSE 376 Lecture 12: Nanoscale CMOS, part 1

    Type Online Presentations
    Contributor(s) Mark Hersam
    Date 31 Mar. 2007
    Avg. Rating 0.0 out of 5 stars  (0)
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    ...

  • 10.0 Ranking Hersam: MSE 376 Lecture 13: Nanoscale ...

    MSE 376 Lecture 13: Nanoscale CMOS, part 2

    Type Online Presentations
    Contributor(s) Mark Hersam
    Date 31 Mar. 2007
    Avg. Rating 0.0 out of 5 stars  (0)
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    ...

  • 7.8 Ranking Lundstrom: Lecture 1: Review of MOSFET ...

    Lecture 1: Review of MOSFET Fundamentals

    Type Online Presentations
    Contributor(s) Mark Lundstrom
    Date 26 Aug. 2008
    Avg. Rating 4.0 out of 5 stars  (1)
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    A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.

  • 7.7 Ranking Alam: Electronics From the Bottom Up: ...

    Electronics From the Bottom Up: top-down/bottom-up views of length

    Type Online Presentations
    Contributor(s) Muhammad A. Alam
    Date 17 Aug. 2007
    Avg. Rating 0.0 out of 5 stars  (0)
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    When devices get small stochastic effects become important. Random dopant effects lead to uncertainties in a MOSFET’s threshold voltage and gate oxides breakdown is a random process. Even a concept as simple as “channel length” becomes uncertain. This short (20 min) talk, a ...

  • 7.5 Ranking Wang: CMOS-Nano Hybrid Technology: a ...

    CMOS-Nano Hybrid Technology: a nanoFPGA-related study

    Type Online Presentations
    Contributor(s) Wei Wang
    Date 04 Apr. 2007
    Avg. Rating 0.0 out of 5 stars  (0)
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    Dr. Wei Wang received his PhD degree in 2002 from Concordia University, Montreal, QC, Canada, in Electrical and Computer Engineering. From 2002 to 2004, he was an assistant professor in the Department of Electrical and Computer Engineering, the University of Western Ontario, London, ON, Canada. ...

  • 7.2 Ranking Lundstrom: Introduction: Physics of Nanoscale ...

    Introduction: Physics of Nanoscale MOSFETs

    Type Online Presentations
    Contributor(s) Mark Lundstrom
    Date 26 Aug. 2008
    Avg. Rating 0.0 out of 5 stars  (0)
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    ...

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Courses

Learning Modules

  • 5.7 Ranking Fodor: Introduction to nanoMOS

    Introduction to nanoMOS

    Type Learning Modules
    Contributor(s) James K Fodor, Jing Guo
    Date 02 Jul. 2007
    Avg. Rating 0.0 out of 5 stars  (0)
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    This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the ...

  • 5.7 Ranking Fodor: Introduction to Schred

    Introduction to Schred

    Type Learning Modules
    Contributor(s) James K Fodor, Jing Guo
    Date 28 Jun. 2007
    Avg. Rating 0.0 out of 5 stars  (0)
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    This learning module introduces nanoHUB users to the Schred simulator. A brief introduction to Schred is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the ...

Teaching Materials

  • 10.0 Ranking Klimeck: Semiconductor Device Education ...

    Semiconductor Device Education Material

    Type Teaching Materials
    Contributor(s) Gerhard Klimeck
    Date 28 Jan. 2008
    Avg. Rating 5.0 out of 5 stars  (2)
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    When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are built from components such as transistors, capacitors, ...

  • 7.9 Ranking Vasileska: MOSFET - Theoretical Exercises

    MOSFET - Theoretical Exercises

    Type Teaching Materials
    Contributor(s) Dragica Vasileska, Gerhard Klimeck
    Date 04 Aug. 2008
    Avg. Rating 0.0 out of 5 stars  (0)
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    www.eas.asu.edu/~vasileskNSF

  • 6.2 Ranking Vasileska: MOSFET Exercise

    MOSFET Exercise

    Type Teaching Materials
    Contributor(s) Dragica Vasileska, Gerhard Klimeck
    Date 08 Jul. 2008
    Avg. Rating 0.0 out of 5 stars  (0)
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    With this exercise students are familiarized with the punchthrough effect, the series resistance at the source and drain region and the importance of impact ionization at high gate and drain bias conditions.www.eas.asu.edu/~vasileskNSF

  • 5.2 Ranking Ferry: MOSfet Homework Assignment - Role ...

    MOSfet Homework Assignment - Role of Dielectric Constant and Thickness

    Type Teaching Materials
    Contributor(s) David K. Ferry
    Date 31 Jan. 2008
    Avg. Rating 0.0 out of 5 stars  (0)
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    Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters: Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes), poly-Si gate, junction depth of 10 nm (20 nodes), and all other parameters at their nominal preset values. Now, change K to 20, and ...

Animations

Publications

  • 10.0 Ranking Ren: Nanoscale MOSFETs: Physics, ...

    Nanoscale MOSFETs: Physics, Simulation and Design

    Type Publications
    Contributor(s) Zhibin Ren
    Date 26 Oct. 2006
    Avg. Rating 0.0 out of 5 stars  (0)
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    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer ...

  • 9.0 Ranking Ren: nanoMOS 2.0: A Two -Dimensional ...

    nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

    Type Publications
    Contributor(s) Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
    Date 06 Oct. 2006
    Avg. Rating 0.0 out of 5 stars  (0)
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    A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space ...

  • 6.1 Ranking Nikonov: Simulation of highly idealized, ...

    Simulation of highly idealized, atomic scale MQCA logic circuits

    Type Publications
    Contributor(s) Dmitri Nikonov
    Date 15 Nov. 2007
    Avg. Rating 0.0 out of 5 stars  (0)
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    Spintronics logic devices based on majority gates formed by atomic-level arrangements of spins in the crystal lattice is considered. The dynamics of switching is modeled by time-dependent solution of the density-matrix equation with relaxation. The devices are shown to satisfy requirements for ...

Downloads

  • 8.3 Ranking Koswatta: MOSCNT: code for carbon nanotube ...

    MOSCNT: code for carbon nanotube transistor simulation

    Type Downloads
    Contributor(s) Siyu Koswatta, Jing Guo, Dmitri Nikonov
    Date 15 Nov. 2006
    Avg. Rating 4.0 out of 5 stars  (2)
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    Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that ...

  • 6.8 Ranking   FETToy 2.0 Source Code Download

    FETToy 2.0 Source Code Download

    Type Downloads
    Contributor(s)
    Date 27 Oct. 2005
    Avg. Rating 4.0 out of 5 stars  (1)
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    FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs, FETToy assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a ...

Workshops

  • 6.7 Ranking Alam: 2008 NCN@Purdue Summer School: ...

    2008 NCN@Purdue Summer School: "Electronics from the Bottom Up"

    Type Workshops
    Contributor(s) Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
    Date 26 Aug. 2008
    Avg. Rating 0.0 out of 5 stars  (0)
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    Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two ...

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