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Tags: devices

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead us into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms! As we push to make devices even smaller, we must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices!

Resources

Tools

Online Presentations

  • 10.0 Ranking Snider: Nanoelectronic Architectures

    Nanoelectronic Architectures

    Type Online Presentations
    Contributor(s) Greg Snider
    Date 28 Aug. 2006
    Avg. Rating 5.0 out of 5 stars  (1)
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    Nanoelectronic architectures at this point are necessarily speculative: We are still evaluating many different approaches to fabrication and are exploring unconventional devices made possible at the nano scale. This talk will start off with a review of some "classical" crossbar structures using ...

  • 10.0 Ranking Lundstrom: Moore's Law Forever?

    Moore's Law Forever?

    Type Online Presentations
    Contributor(s) Mark Lundstrom
    Date 10 Aug. 2005
    Avg. Rating 5.0 out of 5 stars  (4)
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    In 1965, Gordon Moore observed that the number of transistors on a silicon chip doubled every technology generation (12 months at that time, currently 18-24 months). He predicted that this trend would continue for a while. Forty years later, Moore's Law continues to hold. Since the number of ...

  • 10.0 Ranking Shalaev: Plasmonic Nanophotonics: Coupling ...

    Plasmonic Nanophotonics: Coupling Light to Nanostructure via Plasmons

    Type Online Presentations
    Contributor(s) Vladimir M. Shalaev
    Date 04 Oct. 2005
    Avg. Rating 5.0 out of 5 stars  (2)
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    The photon is the ultimate unit of information because it packages data in a signal of zero mass and has unmatched speed. The power of light is driving the photonicrevolution, and information technologies, which were formerly entirely electronic, are increasingly enlisting light to communicate and ...

  • 10.0 Ranking Lundstrom: Simple Theory of the Ballistic ...

    Simple Theory of the Ballistic MOSFET

    Type Online Presentations
    Contributor(s) Mark Lundstrom
    Date 19 Oct. 2005
    Avg. Rating 5.0 out of 5 stars  (2)
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    Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will describe a simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic, but ...

  • 10.0 Ranking Raman: Atomic Force Microscopy

    Atomic Force Microscopy

    Type Online Presentations
    Contributor(s) Arvind Raman
    Date 29 Nov. 2005
    Avg. Rating 5.0 out of 5 stars  (1)
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    Atomic Force Microscopy is has become an indispensible tool in nanoscience for the fabrication, metrology, manipulation and property characterization of nanostructures. In this tutorial, we will review the physics of the interaction forces between the nanoscale tip and sample, the dynamics ...

  • 10.0 Ranking Liu: Nano-Scale Device Simulations ...

    Nano-Scale Device Simulations Using PROPHET

    Type Online Presentations
    Contributor(s) Yang Liu, Robert Dutton, Yang Liu
    Date 22 Jan. 2006
    Avg. Rating 5.0 out of 5 stars  (2)
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    These two lectures are aimed to give a practical guide to the use of a general device simulator (PROPHET) available on nanoHUB. PROPHET is a partial differential equation (PDE) solver that offers users the flexibility of integrating new models and equations for their nano-device simulations. ...

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Courses

  • 9.8 Ranking Lundstrom: ECE 612 Nanoscale Transistors

    ECE 612 Nanoscale Transistors

    Type Courses
    Contributor(s) Mark Lundstrom
    Date 08 Aug. 2006
    Avg. Rating 5.0 out of 5 stars  (15)
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    This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies.

  • 0.0 Ranking Alam: Reliability Physics of Nanoscale ...

    Reliability Physics of Nanoscale Transistors

    Type Courses
    Contributor(s) Muhammad A. Alam
    Date 27 Nov. 2007
    Avg. Rating 0.0 out of 5 stars  (0)
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    This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, we learn how to compute current through a device when a voltage is applied. However, as transistors are turned on and off trillions of times during the years of the ...

Downloads

  • 10.0 Ranking Koswatta: MOSCNT: code for carbon nanotube ...

    MOSCNT: code for carbon nanotube transistor simulation

    Type Downloads
    Contributor(s) Siyu Koswatta, Dmitri Nikonov
    Date 15 Nov. 2006
    Avg. Rating 0.0 out of 5 stars  (0)
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    Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that ...

  • 8.1 Ranking Ren: NanoMOS 2.5 Source Code Download

    NanoMOS 2.5 Source Code Download

    Type Downloads
    Contributor(s) Zhibin Ren, Sebastien Goasguen
    Date 22 Feb. 2005
    Avg. Rating 4.5 out of 5 stars  (2)
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    NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the ...

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