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2009 NCN@Purdue Summer School: Electronics from the Bottom Up
Workshops | 22 Sep 2009 | Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.
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What is the relation between the extrinsic debye length and inbuild depletion width in PN junction?
Q&A|Closed | Responses: 0
How do we find relation between the debye length and the depletion width define by the built in potential of the PN junction??
How to view this intuitively ??
https://nanohub.org/answers/question/783
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Why and how quantum effect comes into picture?? How the density of states are calculated in nanowire/nanotubes??
Q&A|Open | Responses: 1
https://nanohub.org/answers/question/785
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Abhijith Prakash
https://nanohub.org/members/35214
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Akash Paharia
Currently, I am an undergraduate student in Electrical Department of Indian Institute of Technology ,Delhi. I am interested in knowing about new technologies in the field of semiconductors device...
https://nanohub.org/members/38550
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Aniruddha Konar
https://nanohub.org/members/29740
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Carbon Nanotube Electronics: Modeling, Physics, and Applications
Papers | 28 Jun 2013 | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
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chq Zhang
https://nanohub.org/members/309466
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CM Kaushik
https://nanohub.org/members/141571
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Colloquium on Graphene Physics and Devices
Courses | 22 Sep 2009 | Contributor(s):: Joerg Appenzeller, Supriyo Datta, Mark Lundstrom
This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.
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Computational and Experimental Study of Transport in Advanced Silicon Devices
Papers | 28 Jun 2013 | Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...
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Deepanjan Datta
EXPERTISEAdvanced Nano-device Modeling, Semiconductor, Spintronics Memory and Logic device Design, Density Functional Theory and Materials Modeling, Advanced Electronics, High Tech, Strategy,...
https://nanohub.org/members/39071
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Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
Papers | 28 Jun 2013 | Contributor(s):: Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...
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Dhawal Dilip Mahajan
https://nanohub.org/members/65429
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Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
Papers | 28 Jun 2013 | Contributor(s):: Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...
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ECE 606 Lecture 10: Additional Information
Online Presentations | 16 Feb 2009 | Contributor(s):: Muhammad A. Alam
Outline:Potential, field, and chargeE-k diagram vs. band-diagramBasic concepts of donors and acceptorsConclusion
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ECE 606 Lecture 10: Shockley, Reed, Hall and other Recombinations
Online Presentations | 30 Sep 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 11: Equilibrium Statistics
Online Presentations | 16 Feb 2009 | Contributor(s):: Muhammad A. Alam
Outline:Law of mass-action & intrinsic concentration Statistics of donors and acceptor levelsConclusion
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ECE 606 Lecture 11: Interface States Recombination/Carrier Transport
Online Presentations | 10 Oct 2012 | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 12: Equilibrium Concentrations
Online Presentations | 16 Feb 2009 | Contributor(s):: Muhammad A. Alam
Outline:Carrier concentrationTemperature dependence of carrier concentrationMultiple doping, co-doping, and heavy-dopingConclusion