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Nanoelectronic Modeling Lecture 02: (NEMO) Motivation and Background
Online Presentations | 25 Jan 2010 | Contributor(s):: Gerhard Klimeck, Dragica Vasileska
Fundamental device modeling on the nanometer scale must include effect of open systems, high bias, and an atomistic basis. The non-equilibrium Green Function Formalism (NEGF) can include all these components in a fundamentally sound approach and has been the basis for a few novel device...
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Lecture 5: NEGF Simulation of Graphene Nanodevices
Online Presentations | 23 Sep 2009 | Contributor(s):: Supriyo Datta
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Nanoelectronic Modeling: Multimillion Atom Simulations, Transport, and HPC Scaling to 23,000 Processors
Online Presentations | 07 Mar 2008 | Contributor(s):: Gerhard Klimeck
Future field effect transistors will be on the same length scales as “esoteric” devices such as quantum dots, nanowires, ultra-scaled quantum wells, and resonant tunneling diodes. In those structures the behavior of carriers and their interaction with their environment need to be fundamentally...
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Exploring Physical and Chemical control of molecular conductance: A computational study
Online Presentations | 31 Jan 2008 | Contributor(s):: Barry D. Dunietz
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Session 4: Discussion
Online Presentations | 20 Dec 2007
Discussion led by Mark Allendorf, Sandia National Laboratory.