Tags: Capacitance

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  1. Why is capacitance a geometrical property?

    Q&A|Open | Responses: 2

    We have seen since our school that capacitance is a geometrical property. It depends on the structure of the two electrodes. But why is it so. Can anyone shed some light on it?

    https://nanohub.org/answers/question/96

  2. Circuit Elements

    Tools | 17 Feb 2012 | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

    Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.

  3. ECE 495N Lecture 7: Quantum Capacitance/Shrödinger's Equation

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    Online Presentations | 17 Sep 2008 | Contributor(s):: Supriyo Datta

  4. ECE 612 Lecture 3: MOS Capacitors

    0.0 out of 5 stars 

    Online Presentations | 09 Sep 2008 | Contributor(s):: Mark Lundstrom

    Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

  5. Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model

    07 Apr 2016 | Compact Models | Contributor(s):

    By Morteza Gholipour1, Deming Chen2

    1. Babol University of Technology 2. University of Illinois at Urbana-Champaign

    Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node.

    https://nanohub.org/publications/134/?v=1

  6. Impedance Adder

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    Tools | 28 Feb 2012 | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

    Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.

  7. nanoHUB-U: Fundamentals of Nanoelectronics - Part A: Basic Concepts, 2nd Edition

    Courses|' 04 Dec 2014

    Basic Concepts presents key concepts in nanoelectronics and mesoscopic physics and relates them to the traditional view of electron flow in solids.

    https://nanohub.org/courses/FON1

  8. Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition

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    Teaching Materials | 24 Oct 2012 | Contributor(s):: Mark Lundstrom, Xingshu Sun

    These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...

  9. Series and Parallel

    3.0 out of 5 stars 

    Tools | 17 Feb 2012 | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

    Examine the resistance, R, inductance, L, or capacitance, C, of multiple elements in series or in parallel.

  10. UTEP NCN Circuit Theory Tools

    Groups

    The UTEP NCN Circuit Theory Tool group developed a series of tools to assist the undergraduate Electrical Engineering student in the learning of circuit theory.

    https://nanohub.org/groups/utep_ncn_circuit_theory_tools