Sending report ...Tags: ballistic mosfet
Resources
Tools
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9.7 Ranking Wang: ABACUS - Assembly of Basic ...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
Type Tools Contributor(s) Xufeng Wang, Dragica Vasileska, Gerhard Klimeck Date 08 Aug. 2008 Avg. Rating (1) Rate this One-stop-shop for teaching semiconductor device education
Online Presentations
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10.0 Ranking Lundstrom: Simple Theory of the Ballistic ...
Simple Theory of the Ballistic MOSFET
Type Online Presentations Contributor(s) Mark Lundstrom Date 19 Oct. 2005 Avg. Rating (2) Rate this Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will describe a simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic, but ...
- 10.0 Ranking Lundstrom: ECE 612 Lecture 10: The Ballistic ...
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9.6 Ranking Appenzeller: Logic Devices and Circuits on ...
Logic Devices and Circuits on Carbon Nanotubes
Type Online Presentations Contributor(s) Joerg Appenzeller Date 23 May. 2006 Avg. Rating (7) Rate this Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic transport at room-temperature over several hundred nanometers, high performance CN field-effect transistors ...
- 9.5 Ranking Lundstrom: ECE 612 Lecture 11: The ...
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9.3 Ranking Alam: On the Reliability of ...
On the Reliability of Micro-Electronic Devices: An Introductory Lecture on Negative Bias Temperature Instability
Type Online Presentations Contributor(s) Muhammad A. Alam Date 03 Oct. 2005 Avg. Rating (2) Rate this In 1930s Bell Labs scientists chose to focus on Siand Ge, rather than better known semiconductors like Ag2S and Cu2S, mostly because of their reliable performance. Their choice was rewarded with the invention of bipolar transistors several years later. In 1960s, scientists at Fairchild worked hard ...
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9.3 Ranking Guo: Optimization of Transistor Design ...
Optimization of Transistor Design for Carbon Nanotubes
Type Online Presentations Contributor(s) Jing Guo Date 21 Jan. 2006 Avg. Rating (4) Rate this We have developed a self-consistent atomistic simulator for CNTFETs. Using the simulator, we show that a recently reported high-performance CNTFET delivers a near ballistic on-current. The off-state, however, is significantly degraded because the CNTFET operates like a non-conventional Schottky ...
Courses
- 9.1 Ranking Lundstrom: Physics of Nanoscale MOSFETs
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0.3 Ranking Alam: Reliability Physics of Nanoscale ...
Reliability Physics of Nanoscale Transistors
Type Courses Contributor(s) Muhammad A. Alam Date 27 Nov. 2007 Avg. Rating (0) Rate this This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, we learn how to compute current through a device when a voltage is applied. However, as transistors are turned on and off trillions of times during the years of the ...
Learning Modules
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10.0 Ranking Lundstrom: Ballistic Nanotransistors
Ballistic Nanotransistors
Type Learning Modules Contributor(s) Mark Lundstrom Date 07 Dec. 2005 Avg. Rating (13) Rate this This learning module is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights into the performance and limits of nanoscale MOSFETs. This learning module introduces the ...
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5.7 Ranking Fodor: Introduction to nanoMOS
Introduction to nanoMOS
Type Learning Modules Contributor(s) James K Fodor, Jing Guo Date 02 Jul. 2007 Avg. Rating (0) Rate this This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the ...
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5.7 Ranking Fodor: Introduction to FETToy
Introduction to FETToy
Type Learning Modules Contributor(s) James K Fodor, Jing Guo Date 03 Jul. 2007 Avg. Rating (0) Rate this This learning module introduces nanoHUB users to the FETToy simulator. A brief introduction to FETToy is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the ...
Publications
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10.0 Ranking Wang: Device Physics and Simulation of ...
Device Physics and Simulation of Silicon Nanowire Transistors
Type Publications Contributor(s) Jing Wang Date 20 May. 2006 Avg. Rating (0) Rate this As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry ...
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10.0 Ranking Guo: Towards Multi-Scale Modeling of ...
Towards Multi-Scale Modeling of Carbon Nanotube Transistors
Type Publications Contributor(s) Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram Date 21 Sep. 2006 Avg. Rating (0) Rate this Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon ...
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9.2 Ranking Rahman: Exploring New Channel Materials ...
Exploring New Channel Materials for Nanoscale CMOS
Type Publications Contributor(s) Anisur Rahman Date 21 May. 2006 Avg. Rating (2) Rate this The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-k dielectrics, and ...
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9.1 Ranking Lundstrom: Notes on the Ballistic MOSFET
Notes on the Ballistic MOSFET
Type Publications Contributor(s) Mark Lundstrom Date 21 Nov. 2005 Avg. Rating (0) Rate this When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the so-called mean-free-path, λ) is much shorter than the device. ...
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5.7 Ranking Rahman: Theory of Ballistic Nanotransistors
Theory of Ballistic Nanotransistors
Type Publications Contributor(s) Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom Date 27 Nov. 2002 Avg. Rating (0) Rate this Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to ...
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