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A Primer on Semiconductor Device Simulation
Online Presentations | 23 Jan 2006 | Contributor(s):: Mark Lundstrom
Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation tool intelligently, one must know what's "under the hood." This talk is a tutorial introduction designed for someone using semiconductor...
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ACUTE
Tools | 17 Aug 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck, Xufeng Wang, Stephen M. Goodnick
This tool is used for the Advanced Computational Electronics Tool Based Curricula
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ACUTE - Assembly for Computational Electronics
Groups
https://nanohub.org/groups/acute
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ACUTE - Bandstructure Assignment
Teaching Materials | 07 Jul 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This is assignment that is part of the ACUTE tool-based curricula that guides the students step by step how to implement an empirical pseudopotential method for the bandstructure calculation.
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ACUTE - PN Diode Modeling
Teaching Materials | 07 Jul 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
In this assignment, starting from an equilibrium Poisson equation solver for pn-diode, students are required to develop a complete 1D drift-diffusion simulator using the lecture materials provided as part of the ACUTE tool-based curricula.
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ACUTE - Process Simulation Assignment
Teaching Materials | 28 Jul 2011 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This assignment teaches the students the ion implantation process.
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ACUTE—Assembly for Computational Electronics
Wiki
This nanoHUB “topic page” provides an easy access to selected nanoHUB educational material on computational electronics that is openly accessible.
We invite users to participate in...
https://nanohub.org/wiki/ACUTE2
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BJT - Simulation Exercise
Teaching Materials | 03 Aug 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This simulation exercise teaches the students the operation of BJT transistor, what is current gain and how one extracts current gain from the Gummel plot. It also provides output device characteristics from which students have to extract the Early voltage. Furthermore, it makes the students...
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BJT Lab
Tools | 06 Feb 2008 | Contributor(s):: Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Dragica Vasileska, Gloria Wahyu Budiman
This tool simulates a Bipolar Junction Transistor (BJT) using a 2D mesh. Powered by PADRE.
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BJT Problems and PADRE Exercise
Teaching Materials | 11 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This set of problems makes the students familiar with h-parameters and they also teach them how to write the input deck for simulation of BJT device to obtain the Gummel plot, the output characteristics and to extract the h-parameters. Also here, students are taught how to treat current contacts...
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Bulk Band Structure: a Simulation Exercise
Teaching Materials | 03 Aug 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This simulation exercise teaches the students about band structure of indirect and direct bandgap materials, the optical gaps, the concept of the effective mass and the influence of spin-orbit coupling on the valence bandstructure. NSF
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Bulk Monte Carlo Code Described
Teaching Materials | 01 Jul 2008 | Contributor(s):: Dragica Vasileska
In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocity-field characteristics and average carrier energy in bulk GaAs materials. Identical concepts with minor details apply to the development of a bulk Monte Carlo code...
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Bulk Monte Carlo Lab:Scattering Rates for Parabolic vs. Non-Parabolic Bands: an Exercise
Teaching Materials | 20 Aug 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise helps the students learn the importance of the non-parabolic band approximation for large carrier energies.
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Can we define unique effective masses in Si nanowires?
Teaching Materials | 06 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the users that for small nanostructures the concept of the effective mass becomes vague and in order to properly describe nanostructures one has to take into account the numerically calculated dispersion relation. This is clearly illustrated on the example of Si nanowires...
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Choice of the Distribution Function
Online Presentations | 02 Jun 2006 | Contributor(s):: Dragica Vasileska
Solid-State Theory and Semiconductor Transport Fundamentals
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Computational Electronics
Courses | 02 Jun 2006 | Contributor(s):: Dragica Vasileska
Scaling of CMOS devices into the nanometer regime leads to increased processing cost. In this regard, the field of Computational Electronics is becoming more and more important because device simulation offers unique possibility to test hypothetical devices which have not been fabricated yet...
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Computational Electronics
Teaching Materials | 07 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck, Stephen M. Goodnick
As semiconductor feature sizes shrink into the nanometer scale regime, device behavior becomes increasingly complicated as new physical phenomena at short dimensions occur, and limitations in material properties are reached. In addition to the problems related to the actual operation of...
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Computational Electronics HW - Simplified Band Structure Model
Teaching Materials | 11 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
www.eas.asu.edu/~vasileskNSF
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Computational Electronics HW - Bandstructure Calculation
Teaching Materials | 11 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
www.eas.asu.edu/~vasileskNSF
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Computational Electronics HW - DOS and Fermi Golden Rule
Teaching Materials | 11 Jul 2008 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
www.eas.asu.edu/~vasileskNSF