Sending report ...Resources: Publications
There is 1 restricted resource in Nanoelectronics Research Initiative.
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Quantum Transport for Nanostructures
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 234 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
17 Sep. 2006 | Publications | Contributor(s): Mathieu Luisier
Nonequilibrium Green's function techniques, initiated by Schwinger and Kadanoff and Baym allow ones to study the time evolution of a many-particle quantum sys- tem. Knowing the 1-particle Green's functions of a given system, one may evaluate 1-particle quantities like carrier density or …
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Towards Multi-Scale Modeling of Carbon Nanotube Transistors
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 195 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
21 Sep. 2006 | Publications | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon …
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Nanoscale MOSFETs: Physics, Simulation and Design
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 229 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
26 Oct. 2006 | Publications | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer …
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Carbon Nanotube Electronics: Modeling, Physics, and Applications
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 419 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
30 Oct. 2006 | Publications | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ …
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Modeling Quantum Transport in Nanoscale Transistors
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 181 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
30 Oct. 2006 | Publications | Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new …
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Device Physics and Simulation of Silicon Nanowire Transistors
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 222 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
20 May. 2006 | Publications | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry …
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Introduction to the Keldysh Nonequilibrium Green Function Technique
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 137 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
06 Oct. 2006 | Publications | Contributor(s): A. P. Jauho
Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems. The technique is somewhat subtle, and a rigorous treatment would require much more than we have at our disposal, see, for example, the text-bookk by Haug and Jauho [1]. The …
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Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part I − Models and Benchmarks
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 18 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
14 Jan. 2008 | Publications | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Hansang Bae, Steven Clark, Ben Haley, Maxim Naumov, Hoon Ryu, Faisal Saied, marta prada, Marek Korkusinski, Timothy Boykin
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors, and the distinction between new device or new material is blurred. Not only the quantum-mechanical effects in the electronic states of the device but also the granular atomistic representation of …
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Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 17 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
14 Jan. 2008 | Publications | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, marta prada, Timothy Boykin
In part I, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has been discussed. Based on the atomistic valence-force field and the sp3d5s* nearest neighbor tight-binding models, NEMO 3-D enables the computation of strain and electronic structure in nanostructures …
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Exploring New Channel Materials for Nanoscale CMOS
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 180 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
21 May. 2006 | Publications | Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-k dielectrics, and …
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Nanoscale Device Modeling: From MOSFETs to Molecules
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 114 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
21 Sep. 2006 | Publications | Contributor(s): Prashant Subhash Damle
This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices. As convetional metal oxide semiconductor devices shrink below the one hundred nanometer regime, quantum mechanical effects are beginning to play an increasingly important role in …
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nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 109 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
06 Oct. 2006 | Publications | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space …
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Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green's function formalism
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 112 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
31 Oct. 2006 | Publications | Contributor(s): Eric Polizzi, Supriyo Datta
This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the Non-Equilibrium Green's Functions (NEGF) formalism and the variational form of the problem is solved using the …
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Notes on the Ballistic MOSFET
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 137 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
21 Nov. 2005 | Publications | Contributor(s): Mark Lundstrom
When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the so-called mean-free-path, λ) is much shorter than the device. …
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A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 88 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
19 Oct. 2006 | Publications | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the …
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Modeling of Nanoscale Devices
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 113 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
19 Oct. 2006 | Publications | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introduction to the non-equilibrium Green's function (NEGF) approach, which provides a powerful conceptual tool and a practical analysis method to treat small electronic devices quantum mechanically and atomistically. We first review the basis for the …
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A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 66 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
30 Oct. 2006 | Publications | Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical …
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Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 61 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
28 Sep. 2006 | Publications | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the …
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Non Equilibrium Green's Functions for Dummies: Introduction to the One Particle NEGF equations
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 136 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
30 Oct. 2006 | Publications | Contributor(s): Magnus Paulsson
Non equilibrium Green's function methods are regularly used to calculate current and charge densities in nanoscale (both molecular and semiconductor) conductors under bias. This method is mainly used for ballistic conduction but may be extended to include inelastic scattering. In this tutorial …
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Electrical Conduction through Molecules
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 139 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
08 Jul. 2003 | Publications | Contributor(s): Ferdows Zahid, Magnus Paulsson, Supriyo Datta
In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Even three-terminal measurements showing evidence of transistor action has been reported using carbon nanotubes as well as self-assembled …
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Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 36 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
14 Jan. 2008 | Publications | Contributor(s): Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy coordinate …
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Electron-Phonon and Electron-Electron Interactions in Quantum Transport
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 21 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
14 Jan. 2008 | Publications | Contributor(s): Gerhard Klimeck
The ob jective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and electron-phonon interactions are important. We concentrate here on the most developed vertical quantum device, the …
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Quantum Ballistic Transport in Semiconductor Heterostructures
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 43 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
27 Aug. 2007 | Publications | Contributor(s): Michael McLennan
The development of epitaxial growth techniques has sparked a growing interest in an entirely quantum mechanical description of carrier transport. Fabrication methods, such as molecular beam epitaxy (MBE), allow for growth of ultra-thin layers of differing material compositions. Structures can be …
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Resistance of a Molecule
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 92 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
29 Apr. 2003 | Publications | Contributor(s): Magnus Paulsson, Ferdows Zahid, Supriyo Datta
In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Even three-terminal measurements showing evidence of transistor action has been reported using carbon nanotubes [1, 2] as well as …
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Theory of Ballistic Nanotransistors
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Usage Stats Last 12 Months: updated 01 May, 2008 Users: 2 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
27 Nov. 2002 | Publications | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to …