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A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors

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Last 12 Months: updated 01 Nov, 2008
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Contributor(s) Mincheol Shin
Information and Communications University, Daejeon, Korea
Abstract

As the device size of the conventional planar metal oxide semiconductor field effect transistor
(MOSFET) shrinks into the deep sub micron regime, the device performance significantly degrades
mainly due to the short-channel effect. The silicon nanowire field-effect transistor (SNWFET) is
considered as an attractive alternative to the planar MOSFET, because its enhanced gate control
offers many advantages. In this work, the device characteristics of SNWFET have been investigated
by solving the three-dimensional (3D) Poisson equation and the quantum ballistic transport equation
self-consistently, and the dependence of the device performance on the gate number, configuration,
and shape has been examined in conjunction with the effect of the wave function confinement.
Numerical techniques to efficiently solve the 3D problem will be also addressed in this talk.
Biography Currently, Mincheol is an Associate Professor at the Information and Communications University in
Daejeon, Korea. His research is on Nano-scale Quantum Device Simulations. From 1993 to 2002, he
was a Senior Researcher at the Electronics and Telecommunications Research Institute, Daejeon,
Korea. His main focus was on quantum transport in quantum wires, single electron transistors, etc.
He received his Ph.D. in Physics from Northwestern University in 1992. He received his B.S. in
Physics from Seoul National University in 1988.
Cite this work

If you reference this work in a publication, please cite as follows:

  • Shin, Mincheol (2006), "A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors," http://www.nanohub.org/resources/983/.

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Date posted 17 Jan, 2006
Time 10:30 AM, January 17, 2006
Location MSEE 239
Type Online Presentations
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  1. 5.0 out of 5 stars 

    Posted on 08 March, 2007 by Anonymous

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