Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs
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Usage Stats Last 12 Months: updated 01 Nov, 2008 Users: 72 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
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| Contributor(s) | Mark Lundstrom Purdue University, West Lafayette |
|---|---|
| Abstract | These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without making the δ-depletion approximation. |
| Credits | Used in ECE 612 Nanoscale Transistors |
| Cite this work | If you reference this work in a publication, please cite as follows: |
| Date posted | 27 Aug, 2008 |
| Type | Teaching Materials |
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