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ECE 612: Nanoscale Transistors (Fall 2008)

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Contributor(s) Mark Lundstrom
Purdue University, West Lafayette
Abstract Fall 2008

Please Note: This course is being offered this semester, lectures will be made available as they are produced.

This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 treats silicon MOS and MOSFET fundamentals as well as second order effects such as gate leakage and quantum mechanical effects. Short channel effects, device scaling, and fabrication processes and reliability are the subject of Part 2. In Part 3, we discuss circuit and systems issues and then examine strained silicon, III-V HEMTs, and nanowire transistors. The use of computer simulation to examine device issues is an integral part of the course.

Syllabus: 2008/08/05328/ece612-f08-syllabus.pdf

Text:
Fundamentals of Modern VLSI Devices, Yuan Taur and Tak H. Ning, Cambridge Univ. Press ISBN: 0 521 55056 4 (hardback) 0 521 55959 6 (paperback)
Advanced Semiconductor Fundamentals, 2nd Edition R.F. Pierret, Prentice Hall, ISBN 0-13-061792-X


Course website: cobweb.ecn.purdue.edu/~ee612
Cite this work

If you reference this work in a publication, please cite as follows:

  • Lundstrom, Mark (2008), "ECE 612: Nanoscale Transistors (Fall 2008)," http://www.nanohub.org/resources/5328/.

    BibTex | EndNote

Date posted 27 Aug, 2008
Type Courses
Tags
Lecture Number/Topic Breeze Video Lecture Notes (PDF) Supplemental Material Suggested Exercises
ECE 612 Introductory Lecture View View Notes
ECE 612 Lecture 1: 1D MOS Electrostatics I View View Notes
ECE 612 Lecture 2: 1D MOS Electrostatics II View View Notes
ECE 612 Lecture 3: MOS Capacitors View View Notes
Currently unavilable
ECE 612 Lecture 4: Polysilicon Gates/QM Effects View View Notes
ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge View View Notes
ECE 612 Lecture 6: MOSFET IV: Velocity saturation View View Notes
ECE 612 Lecture 7: Scattering Theory of the MOSFET I View View Notes
ECE 612 Lecture 8: Scattering Theory of the MOSFET II View View Notes
ECE 612 Lecture 11: Effective Mobility View View Notes
ECE 612 Lecture 12: 2D Electrostatics View View Notes
ECE 612 Lecture 14: VT Engineering View View Notes
ECE 612 Lecture 15: Series Resistance (and effective channel length) View View Notes
ECE 612 Lecture 16: MOSFET Leakage View View Notes
ECE 612 Lecture 17: Gate Resistance and Interconnects View View Notes
ECE 612 Lecture 18A: CMOS Process Steps View View
ECE 612 Lecture 18B: CMOS Process Flow View View Notes
ECE 612 Lecture 19: Device Variability View View Notes
ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
Guest lecturer: Muhammad A. Alam.		 View View Notes

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