Sending report ...2008 NCN@Purdue Summer School: "Electronics from the Bottom Up"
Physics of Nanoscale MOSFETs
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| Contributor(s) | Mark Lundstrom Purdue University, West Lafayette |
|---|---|
| Abstract | Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of nanoscale dimensions. lecture 1 reviews traditional MOSFET theory, and Lecture 2 presents the new approach in its simplest form. Lectures 3A and 3B describe the mathematical treatment of ballistic MOSFETs and Lecture 4 discusses at a simple level the physics of scattering in quasi-ballistic MOSFETs. Lecture 5 illustrates how this approach us used to analyze and interpret experimental data. Lectures 1-5 are based on a semi-classical treatment; in Lecture 6, an introduction to the quantum transport in nano-MOSFETs is provided. Finally, Lecture 7 connects this sort course to the “bottom up” approach of Supriyo Datta. |
| Biography | 
Mark Lundstrom directs the National Science Foundations Network for Computational Nanotechnology (NCN) and is the Don and Carol Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University. He earned his bachelor's and master's degrees from the University of Minnesota in 1973 and 1974, respectively and joined the Purdue faculty upon completing his doctorate on the West Lafayette campus in 1980. Before attending Purdue, he worked at Hewlett-Packard Corporation on MOS process development and manufacturing. At Purdue, he has worked on solar cells, heterostructure devices, carrier transport physics, and his current research interests focus on the physics and technology of nanoscale transistors. He is the author of two books, Fundamentals of Carrier Transport (2nd Ed., Cambridge, 2000) and Nanoscale Transistors: Device Physics, Modeling, and Simulation (Springer, 2005). Lundstrom is a fellow of the Institute of Electrical and Electronic Engineers (IEEE), the American Physical Society, and the Association for the Advancement of Science. He is the recipient of several awards for his teaching and research, most recently Semiconductor Industry Association’s 2005 University Researcher Award for his career contributions to the semiconductor industry and the 2006 Education Award from the IEEE Electron Devices Society. |
| Sponsored by | NCN@Purdue Summer School 2008 National Science Fondation Intel Corporation |
| Cite this work | If you reference this work in a publication, please cite as follows: |
| Date posted | 26 Aug, 2008 |
| Type | Courses |
| Tags |
| Lecture Number/Topic | Breeze | Video | Lecture Notes (PDF) | Supplemental Material | Suggested Exercises |
|---|---|---|---|---|---|
| Introduction: Physics of Nanoscale MOSFETs | View | View | Notes | ||
| Lecture 1: Review of MOSFET Fundamentals A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included. |
View | View | Notes | Exercises | |
| Lecture 2: Elementary Theory of the Nanoscale MOSFET A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures. |
View | View | Notes | Exercises | |
| Lecture 3A: The Ballistic MOSFET The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed intuitively in Lecture 2. |
View | View | Notes | Exercises | |
| Lecture 3B: The Ballistic MOSFET This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model. |
View | View | Notes | Exercises | |
| Lecture 4: Scattering in Nanoscale MOSFETs No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and that allows us to interpret the results of detailed simulations. |
View | View | Notes | Exercises | |
| Lecture 5: Application to State-of-the-Art FETs The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs. |
View | View | Notes | Exercises | |
| Lecture 6: Quantum Transport in Nanoscale FETs The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use these results to elucidate the physics discussed in previous lessons and to identify issues that still need to be clarified. |
View | View | Notes | ||
| Lecture 7: Connection to the Bottom Up Approach While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly. |
View | View | Notes | ||
| Notes on Fermi-Dirac Integrals (2nd Edition) Fermi-Dirac integrals appear frequently in semiconductor problems, so an understanding of their properties is essential. The purpose of these notes is to collect in one place, some basic information about Fermi-Dirac integrals and their properties. We also present Matlab functions (in a zipped file) that calculate Fermi-Dirac integrals in three different ways. The function, “FD_int_approx.m”, evaluates Fermi-Dirac integrals using analytic approximations developed by Bednarczyk et al. ... |
Notes on Fermi-Dirac Integrals Matlab Scripts |
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Posted on 09 September, 2008 by Anonymous
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6.8 Ranking Workshops
Part of: 2008 NCN@Purdue Summer School: "Electronics from the Bottom Up"
2008 NCN@Purdue Summer School: "Electronics from the Bottom Up"
Type Workshops Contributor(s) Muhammad A. Alam, Supriyo Datta, Mark Lundstrom Date 26 Aug, 2008 Avg. Rating (0) Rate this Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two …
- 0.0 Ranking Topic Electronics From the Bottom Up: A New Approach to Nanoelectronic Devices and Materials
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