Sending report ...2008 NCN@Purdue Summer School: "Electronics from the Bottom Up"
- This resource has a 6.8 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Nov, 2008 Users: 139 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
139 users
| Contributor(s) | Muhammad A. Alam, Supriyo Datta, Mark Lundstrom Purdue University, West Lafayette |
|---|---|
| Abstract | The field of semiconductor microelectronics is undergoing a transformation to nanoelectronics. This transformation has been largely driven by a “top-down” approach that extends concepts and techniques originally developed for bulk semiconductors and large device to the new field of nanoscale device technology. But to exploit the opportunities that nanoscience presents, engineers will need to learn how to think about materials, devices, circuits, and systems in a new way to complement traditional, top-down understanding with new, “bottom-up” perspectives.
Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two contacts. For carrier transport, it means beginning at the nanoscale where ballistic transport, atomistic effects, and stochastic effects dominate. For MOSFETs, it means beginning with the “ultimate” MOSFET. Electronics from the Bottom Up does not mean ab initio numerical simulations – it means beginning with concepts and approaches that are both simple and sound at the nanoscale rather than extrapolated from the microscale. For more information, see Electronics From the Bottom Up. |
| Sponsored by | NCN@Purdue Summer School 2008 National Science Fondation Intel Corporation |
| Cite this work | If you reference this work in a publication, please cite as follows: |
| Date posted | 26 Aug, 2008 |
| Time | July 14-25, 2008 |
| Location | Purdue University, West Lafayette, IN |
| Type | Workshops |
| Tags |
In This Series
-
Introductory Comments
- This resource has a 0.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Nov, 2008 Users: 0 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
29 Sep. 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
…
-
Nanoelectronics and the Meaning of Resistance
- This resource has a 9.7 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Nov, 2008 Users: 285 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
285 users
20 Aug. 2008 | Courses | Contributor(s): Supriyo Datta
The purpose of this series of lectures is to introduce the "bottom-up" approach to nanoelectronics using concrete examples. No prior knowledge of quantum mechanics or statistical mechanics is assumed; however, familiarity with matrix algebra will be helpful for some topics.
-
Physics of Nanoscale MOSFETs
- This resource has a 8.7 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Nov, 2008 Users: 338 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
338 users
26 Aug. 2008 | Courses | Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of …
-
Percolation Theory
- This resource has a 0.0 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Reviews & Citations Google/IEEE Avg. Review: Citations: 0
unavailable users
03 Nov. 2008 | Courses | Contributor(s): Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or metal crystals in nanocrystal Flash memory, the number of Nanowires in a flexible nanoNET transistor, …
Citations
The following are publications that have cited this resource, separated by their affiliation to the NCN.
No citations found.
Reviews
The following are reviews of this resource from other site members.
No reviews found. Be the first to review this resource!
People who looked at this also looked at:
Network Recommendations powered by CIKNOW developed by the Science of Networks in Communities Research (SONIC) group at Northwestern University.
Recommendations will load momentarily. If you do not see content change after 30 seconds, there may be a number of reasons:
- You have javascript turned off in your browser.
- You have browser incapable of handling the scripts that load the recommendations.
- There is a problem with the recommendation service and it failed to respond.