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Nanoelectronics and the Meaning of Resistance

Lecture 3B: Spin Transport

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Last 12 Months: updated 01 Nov, 2008
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Contributor(s) Supriyo Datta
Purdue University, West Lafayette
Abstract Figure 3 Objective: To extend the model from Lectures 1 and 2 to include electron spin. Every electron is an elementary “magnet” with two states having opposite magnetic moments. Usually this has no major effect on device operation except to increase the conductance by a factor of two. But it is now possible to inject, detect and manipulate spins in a controlled way and even use them to manipulate nanometer-sized magnets. The extended model will be used to describe such phenomena including spin-Hall effect, tunneling magnetoresistance (TMR) and spin-torque devices.

This lecture is part 2 of 2.
Sponsored by NCN@Purdue Summer School 2008
National Science Fondation
Intel Corporation
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  • Datta, Supriyo (2008), "Lecture 3B: Spin Transport," http://www.nanohub.org/resources/5270/.

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Date posted 20 Aug, 2008
Time 01:30 PM, July 16, 2008
Location Purdue University, West Lafayette, IN
Type Online Presentations
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  • 9.7 Ranking Courses Part of: Nanoelectronics and the Meaning of Resistance

    Nanoelectronics and the Meaning of Resistance

    Type Courses
    Contributor(s) Supriyo Datta
    Date 20 Aug, 2008
    Avg. Rating 5.0 out of 5 stars  (6)
    Rate this

    The purpose of this series of lectures is to introduce the "bottom-up" approach to nanoelectronics using concrete examples. No prior knowledge of quantum mechanics or statistical mechanics is assumed; however, familiarity with matrix algebra will be helpful for some topics.

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