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Analytic Spin Precession Simulator

This resource has a 5.4 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Overall Period: Updated 20 Nov, 2008
Users: 20
Jobs: 120
Avg. exec. time: 31 secs
Reviews & Citations
Google/IEEE
Avg. Review: 0.0 out of 5 stars
Citations: 0

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Available Versions

  • 1.0 (published)

Supporting Documents

Version 1.0 - published on 18 Aug, 2008
Contributor(s) Jing Xu, Ian Appelbaum
University of Delaware
At a glance Simulate spin precession effect in pure silicon
Description Spin precession and dephasing (``Hanle effect'') provides an umbiguous means to establish the presence of spin transport in semiconductors. Analytic spin precession simulator simulates ``Hanle effect'' in linear band pure silicon spin transport device with the presence of a perpendicular magnetic field. Spin diffusion-drift equation is used to provide an analytical transit time distribution of electrons. Final signal received at detector side is plotted as a function of perpendicular magnetic field intensity. Use this tool to understand the effects of oblique magnetization, injector/detector magnetization flipping and tilting on spin precession.
Credits

Analytic spin precession simulator has been developed by Appelbaum Lab at University of Delaware, Newark, DE.

Sponsored by

DARPA/MTO and ONR.

References

Ian Appelbaum, Biqin Huang, and Douwe J. Monsma, "Electronic measurement and control of spin transport in silicon", Nature 447, 295 (2007).

Jing Li, Biqin Huang, and Ian Appelbaum, "Oblique Hanle Effect in Semiconductor Spin Transport Devices", Appl. Phys. Lett. 92, 142507 (2008).

Cite this work

If you reference this work in a publication, please cite as follows:

  • Xu, Jing; Appelbaum, Ian (2008), "Analytic Spin Precession Simulator," doi: 10254/nanohub-r5226.1.

    BibTex | EndNote

In addition, we would appreciate it if you would add the following acknowledgment to your publication:

  • Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org
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