Sending report ...Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
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Supporting Documents
- Presentation (with audio) (SWF)
- Presentation Slides (PDF, 857.94 Kb)
- Podcast (video) What's this? (MP4, 38.15 Mb)
- Podcast (audio) What's this? (MP3, 26.87 Mb)
Licensed under Creative Commons according to this deed.
| Contributor(s) | Mark Lundstrom Purdue University, West Lafayette |
|---|---|
| Abstract | Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins from the nanoscale. My objectives in this talk are: 1) to describe a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of nanoscale dimensions, and 2) to introduce the “bottom up” approach, a way of understanding nanoscale electronics very generally. This talk will provide a starting point for those interested in exploring the electronics from the bottom up approach through the resources of nanoHUB.org. |
| Biography | 
Prof. Lundstrom earned bachelor's and master's degrees in electrical engineering from the Univ. of Minnesota in 1973 and 1974, respectively. He joined the Purdue faculty upon completing his doctorate on the W. Lafayette campus in 1980. During the course of his career at Purdue, Lundstrom has served as director of the Optoelectronics Research Cntr. and Asst. Dean of the Schools of Engineering. He is currently the Don and Carol Scifres Distinguished Professor of Electrical and Computer Engineering and Founding Director of NSF Network for Computational Nanotechnology.
Lundstrom’s current research interests center on the physics and limits of small electronic devices, especially nanoscale transistors and on carrier transport in semiconductor devices. His work on the limits of silicon transistors, on exploratory devices such as carbon nanotube and semiconductor nanowire devices, as well as his work on carrier transport physics and numerical methods for simulation is well-known and widely-cited. |
| Sponsored by | 23rd Symposium on Microelectronics Technology and Devices: SB Micro 2008 IEEE / EDS Mini Colloquium |
| Cite this work | If you reference this work in a publication, please cite as follows: |
| Date posted | 10 Sep, 2008 |
| Time | September 01, 2008 |
| Location | Hotel Serra Azul, Gramado, Brazil |
| Type | Online Presentations |
| Tags |
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