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Cylindrical CNT MOSFET Simulator

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Usage Stats
Overall Period: Updated 19 Nov, 2008
Users: 52
Jobs: 211
Avg. exec. time: 14 mins
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Avg. Review: 0.0 out of 5 stars
Citations: 0

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Available Versions

Version 0.9.1b - published on 30 Sep, 2008
Contributor(s) Gloria Wahyu Budiman
Purdue University - West Lafayette

Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom
Purdue University, West Lafayette
At a glance Simulate 2-D electrons transport in CNTFET
Description Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green's function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that this code does NOT treat Schottky-barrier CNTFETs. Additional information on the device geometry and the simulation procedure is described in [1]. The code can readily simulate band-to-band tunneling in CNT-MOSFETs, as well as p-i-n type device architectures, by appropriately modifying the source/drain doping conditions [2,3]. This abstract is taken from the original one from the original MOSCNT MATLAB code
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Credits

Originally created by Jing Guo (Purdue University), 2003.
Revised by Siyu Koswatta (Purdue University) and Dmitri Nikonov (Intel), 2004.
Modified to be run under Rappture by Gloria Budiman, 2008.

Copyright of all codes contained in this archive by Purdue Research Foundation, 2003. See attached license which governs distribution, copying and modification.

Cite this work

If you reference this work in a publication, please cite as follows:

  • Budiman, Gloria Wahyu; Gao, Yunfei; Wang, Xufeng; Koswatta, Siyu; Lundstrom, Mark (2008), "Cylindrical CNT MOSFET Simulator," doi: 10254/nanohub-r5094.3.

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In addition, we would appreciate it if you would add the following acknowledgment to your publication:

  • Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org
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