Online Simulation

And More

Top 25 Tags (all tags)

  1. algorithms
  2. aqme
  3. carbon nanotubes
  4. course lecture
  5. cyberinfrastructure
  6. devices
  7. education/outreach
  8. experiments
  9. material science
  10. molecular electronics
  11. nano/bio
  12. nanobio applications
  13. nano electro-mechanical systems
  14. nanoelectronics
  15. nanomedicine
  16. nanophotonics
  17. nano-transistors
  18. nanowires
  19. NEGF
  20. quantum dots
  21. quantum transport
  22. research seminar
  23. transistors
  24. tutorial
  25. uIllinois

Other

Trouble Report

For immediate assistance browse through our support center. You can find answers to many questions in just a few minutes.

If still experiencing problems, send us a report.

Sending report ...

Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices

This resource has a 5.5 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Last 12 Months: updated 01 Nov, 2008
Users: 23
Reviews & Citations
Google/IEEE
Avg. Review: 0.0 out of 5 stars
Citations: 0

23 users

0 reviews (Review this)

0 citations

View Presentation

Licensed under Creative Commons according to this deed.

Contributor(s) Ahmad Ehteshamul Islam, Muhammad A. Alam
Purdue University, West Lafayette
Abstract

Mobility degradation due to generation of interface
traps, Δμeff(NIT), is a well-known phenomenon that has been
theoretically interpreted by several mobility models. Based on
these analysis, there is a general perception that Δμeff(NIT) is
relatively insignificant (compared to Δμeff due to ionized
impurity) and as such can be safely ignored for performance and
reliability analysis. Here, we investigate the importance of
considering Δμeff(NIT) for reliability analysis by analyzing a wide
variety of plasma oxynitride PMOS devices using both
parametric and physical mobility models. We find that contrary
to popular belief this correction is fundamentally important for
robust and uncorrupted estimates of the key reliability
parameters like threshold-voltage shift, lifetime projection,
voltage acceleration factor, etc. Therefore, in this paper, we
develop a generalized algorithm for estimating Δμeff(NIT) for
plasma oxynitride PMOS devices and systematically explore its
implications for NBTI-specific reliability analysis.

Credits Vrajesh D. Maheta
Hitesh Das
Souvik Mahapatra
Sponsored by We acknowledge financial supports from Applied Materials,
Renesas Technologies and Taiwan Semiconductor Manufacturing
Company in this work. Thanks to Network for Computational
Nanotechnology at Purdue University for providing the necessary
computational facilities.
References “Mobility Degradation Due to Interface Traps in Plasma Oxinitride PMOS Devices”, A. E. Islam, V. D. Maheta, H. Das, S. Mahapatra, and M. A. Alam, Proc. of International Reliability Physics Symposium, Apr 2008, pp. 87-96.[1] S. Villa, A. L. Lacaita, L. M. Perron, and R. Bez, "Physically based model of the effective mobility in heavily-doped n-
MOSFET's," IEEE Trans. Electron Devices, vol. 45, pp. 110-115,
1998.
[2] A. T. Krishnan, V. Reddy, S. Chakravarthi, J. Rodriguez, S.
Natarajan, S. John, and S. Krishnan, "NBTI impact on Transistor
and Circuit: Models, Mechanisms and Scaling Effects," IEDM
Tech. Dig., pp. 349-352, 2003.
[3] S. Mahapatra, K. Ahmed, D. Varghese, A. E. Islam, G. Gupta,
L. Madhav, D. Saha, and M. A. Alam, "On the Physical
Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can
Differences in Insulator Processing Conditions Resolve the
Interface Trap Generation versus Hole Trapping Controversy?,"
Proc IEEE IRPS, pp. 1-9, 2007.
Cite this work

If you reference this work in a publication, please cite as follows:

  • Islam, Ahmad Ehteshamul; Alam, Muhammad A. (2008), "Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices," http://www.nanohub.org/resources/4835/.

    BibTex | EndNote

Date posted 01 Jul, 2008
Type Online Presentations
Tags

Citations

The following are publications that have cited this resource, separated by their affiliation to the NCN.

No citations found.

Reviews

The following are reviews of this resource from other site members.

Write a review

No reviews found. Be the first to review this resource!

People who looked at this also looked at:

Network Recommendations powered by CIKNOW developed by the Science of Networks in Communities Research (SONIC) group at Northwestern University.

Recommendations will load momentarily. If you do not see content change after 30 seconds, there may be a number of reasons:

  • You have javascript turned off in your browser.
  • You have browser incapable of handling the scripts that load the recommendations.
  • There is a problem with the recommendation service and it failed to respond.