NCN Nanoelectronics: Simulation Tools for Education
MOSFet
- This resource has a 7.6 Ranking
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Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Overall Period: Updated 20 Nov, 2008 Users: 1812 Jobs: 22065 Avg. exec. time: 5 mins Reviews & Citations Google/IEEE: updated 22 Apr, 2008 Avg. Review: Citations: 2
1812 users, detailed statistics
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This tool is closed source.
Available Versions
- 1.22 (published)
- 1.21 (unpublished)
- 1.2 (unpublished)
- 1.11 (unpublished)
- 1.0 (unpublished)
- More...
| Version | 1.22 - published on 27 Oct, 2008 |
|---|---|
| Contributor(s) | Matteo Mannino, Shaikh S. Ahmed, Gerhard Klimeck Purdue University, West Lafayette Dragica Vasileska Arizona State University Xufeng Wang, Himadri Pal Purdue University, West Lafayette |
| At a glance | Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) |
| Screenshots | |
| Description | The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET). MOSFet tool simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles. Teachnig Material and Exercises: MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs. |
| Powered by | PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs. |
| Cite this work | If you reference this work in a publication, please cite as follows:
In addition, we would appreciate it if you would add the following acknowledgment to your publication:
|
| Type | Tools |
| Tags |
Citations
The following are publications that have cited this resource, separated by their affiliation to the NCN.
Non-affiliated authors
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Myers-Riggs, R.R.; Roenker, K.P. (2005), "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport" (Master's Thesis), University of Cincinnati.
Affiliated authors
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Klimeck, G. (2007), "NanoHUB.org Tutorial: Education Simulation Tools," Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on: pg. nil41-nil41, 01. 1-4244-0610-2. (DOI: 10.1109/NEMS.2007.351992).
Myers-Riggs, R.R.; Roenker, K.P. (2005), "Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport" (Master's Thesis), University of Cincinnati.
Affiliated authors
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Klimeck, G. (2007), "NanoHUB.org Tutorial: Education Simulation Tools," Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on: pg. nil41-nil41, 01. 1-4244-0610-2. (DOI: 10.1109/NEMS.2007.351992).
Reviews
The following are reviews of this resource from other site members.
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Posted on 19 April, 2008 by Anonymous
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Posted on 09 April, 2008 by Haydar MAHMOUD
0 -1 Login to vote this simulator is not used for real MOSFET designing, because it lacks the dynamic property implemented by BTE and it doesn't take into account the QM effects.
reply | report abuse -
Posted on 09 April, 2008 by Haydar MAHMOUD
0 0 Login to vote this simulator is not used for real MOSFET designing, because it lacks the the dynamic simulation implemented by BTE and doesn't take into account the QM effects.
reply | report abuse -
Posted on 12 October, 2006 by Anonymous
+1 0 Login to vote A comprehensive device simulator
reply | report abuse -
Posted on 30 November, 2005 by reza
See also
The following are resources that may cover similar or related topics.
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Part of: NCN Nanoelectronics: Simulation Tools for Education
NCN Nanoelectronics: Simulation Tools for Education
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Related Questions & Answers
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- Short channel modeling using this tool? - 0 responses
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