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NCN Nanoelectronics: Simulation Tools for Education

MOSFet

This resource has a 7.6 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Overall Period: Updated 20 Nov, 2008
Users: 1812
Jobs: 22065
Avg. exec. time: 5 mins
Reviews & Citations
Google/IEEE: updated 22 Apr, 2008
Avg. Review: 4.0 out of 5 stars
Citations: 2

1812 users, detailed statistics

5 reviews (Review this)

2 citations

1 question (Ask a question)

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This tool is closed source.

Version 1.22 - published on 27 Oct, 2008
Contributor(s) Matteo Mannino, Shaikh S. Ahmed, Gerhard Klimeck
Purdue University, West Lafayette

Dragica Vasileska
Arizona State University

Xufeng Wang, Himadri Pal
Purdue University, West Lafayette
At a glance Simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs)
Screenshots
  • Screenshot #1
  • Screenshot #2
  • Screenshot #3
Description

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET).

MOSFet tool simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles.

Teachnig Material and Exercises:

  • MOSFET Operation Description
  • MOSFET Exercises: Series Resistance, Punchthrough and Impact Ionization
  • SOI Exercise: Basic Operation of n-channel SOI Device
  • MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

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    PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.

    Cite this work

    If you reference this work in a publication, please cite as follows:

    • Mannino, Matteo; Ahmed, Shaikh S.; Klimeck, Gerhard; Vasileska, Dragica; Wang, Xufeng; Pal, Himadri (2006), "MOSFet," doi: 10254/nanohub-r452.6.

      BibTex | EndNote

    In addition, we would appreciate it if you would add the following acknowledgment to your publication:

    • Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org

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    Reviews

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    1. 5.0 out of 5 stars 

      Posted on 19 April, 2008 by Anonymous

    2. 2.0 out of 5 stars 

      Posted on 09 April, 2008 by Haydar MAHMOUD

      0   -1   Login to vote this simulator is not used for real MOSFET designing, because it lacks the dynamic property implemented by BTE and it doesn't take into account the QM effects.

      reply | report abuse
    3. 2.0 out of 5 stars 

      Posted on 09 April, 2008 by Haydar MAHMOUD

      0   0   Login to vote this simulator is not used for real MOSFET designing, because it lacks the the dynamic simulation implemented by BTE and doesn't take into account the QM effects.

      reply | report abuse
    4. 5.0 out of 5 stars 

      Posted on 12 October, 2006 by Anonymous

      +1   0   Login to vote A comprehensive device simulator

      reply | report abuse
    5. 5.0 out of 5 stars 

      Posted on 30 November, 2005 by reza

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