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NCN Nanoelectronics: Simulation Tools for Education

MOSCap

This resource has a 6.7 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Overall Period: Updated 19 Jul, 2008
Users: 746
Jobs: 7263
Avg. exec. time: 5 secs
Reviews & Citations
Google/IEEE
Avg. Review: 2.0 out of 5 stars
Citations: 0

746 users, detailed statistics

1 review (Review this)

0 citations

0 questions (Ask a question)

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This tool is closed source.

Available Versions

  • 1.0 (published)
Version 1.0 - published on 06 Apr, 2006
Contributor(s) Akira Matsudaira
University of Illinois at Urbana Champaign

Shaikh S. Ahmed, Gerhard Klimeck
Purdue University, West Lafayette

Dragica Vasileska
Arizona State University
At a glance Simulates the capacitance of bulk and dual gate capacitors for a variety of
Screenshots
  • Screenshot #1
  • Screenshot #2
  • Screenshot #3
Description MOSCap simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual -gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature, doping concentration and applied frequency. Among the quantities simulated, the low and high -frequency capacitance-voltage (CV) characteristics and various spatial profiles (energy band, vertical electric field, charge densities etc.) are of special importance.

MOSCap is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

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PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.

Cite this work

If you reference this work in a publication, please cite as follows:

  • Matsudaira, Akira; Ahmed, Shaikh S.; Klimeck, Gerhard; Vasileska, Dragica (2006), "MOSCap," doi: 10254/nanohub-r451.1.

    BibTex | EndNote

In addition, we would appreciate it if you would add the following acknowledgment to your publication:

  • Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org

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  1. 2.0 out of 5 stars 

    Posted on 07 September, 2007 by Anonymous

    Closed source, so this tool is about as useful as a paperweight if your situation differs even slightly from one of its cookie-cutter options.

    The "we won't even let you download binaries, you must run it on our machines" is another nice touch. You guys would make Bill Gates proud.

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