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Molecular Beam Epitaxy

This resource has a 5.1 Ranking

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Last 12 Months: updated 01 Oct, 2008
Users: 8
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Avg. Review: 0.0 out of 5 stars
Citations: 0

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Contributor(s) John C. Bean
University of Virginia, Charlottesville, VA
Abstract

This resource describes Molecular Beam Epitaxy (MBE).

Microelectronic devices are made by repeating two steps: 1) Depositing a thin uniform layer of material; 2) Then using a photographic process to pattern and remove unwanted areas of that layer.

Layer thickness determines the height of the device, photography determines its length and width. So, to make devices smaller, you can make the layers thinner and/or make the photographic features finer.

Molecular Beam Epitaxy (MBE) is the all time champ at making thin layers - with MBE one can routinely make layers a single atom thick!

Credits

John Bean, University of Virginia
Virtual Science Lab

Cite this work

If you reference this work in a publication, please cite as follows:

  • Bean, John C. (2005), "Molecular Beam Epitaxy," http://www.nanohub.org/resources/448/.

    BibTex | EndNote

Date posted 16 Nov, 2005
Type Animations
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