Sending report ...MuGFET first-time user guide
- This resource has a 8.4 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Oct, 2008 Users: 49 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
49 users
Download (PDF, 929.4 Kb)
Supporting Documents
- Presentation Slides (PDF, 929.4 Kb)
- mugfet_first_time_user_guide.pptx (PPTX, 1.05 Mb)
Licensed under Creative Commons according to this deed.
| Contributor(s) | SungGeun Kim, Sriraman Damodaran, Ben Haley, Gerhard Klimeck Purdue University, West Lafayette |
|---|---|
| Abstract | MuGFET is a simulation tool for nano-scale multi-gate FET structures. This teaching material provides introductory instructions to the use of the MuGFET tool set. MuGFET users can either use the PROPHET or the PADRE tools which provide self-consistent solutions to the Poisson and drift-diffusion equation. At the nanometer scale quantum transport approaches that are based on a full 3D Poisson-Schroedinger solution like the nanowire Lab or the atomistically resolved Bandstructure Lab are needed to provide insight into transport. However, for devices that are 10nm or larger semi-classical approaches can provide some significant insight. For device domains 30nm or larger, quantum approaches as implemented in today's simulators, may not contain enough physics of scattering and dephasing. Therefore there are some advantages in using classical simulation approaches over quantum simulation approaches for certain classes of device regimes. Drift and diffusion simulations are significantly faster than quantum ballistic simulations and also fairly well fitted the experimental results. PROPHET is a PDE (partial differential equation) solver for 1, 2, or 3 dimension. In PROPHET, equations are extensible and flexible in geometry. So it is used in more general-purpose physics simulation. PADRE is a device-oriented simulator for 2D/3D device with arbitrary geometry. It provides many useful plots for engineers and deep understanding of physics. Many options are provided with respect to the numerical methods and semiconductor device physics. MuGFET is user-friendly graphical user interface and provides a lot of useful plots such as subthreshold, DIBL, on/off current ratio, etc. Users don't have to calculate these parameters by themselves. |
| Sponsored by | NCN@Purdue |
| Cite this work | If you reference this work in a publication, please cite as follows: |
| Date posted | 28 Apr, 2008 |
| Type | Teaching Materials |
| Tags |
Citations
The following are publications that have cited this resource, separated by their affiliation to the NCN.
No citations found.
Reviews
The following are reviews of this resource from other site members.
No reviews found. Be the first to review this resource!
People who looked at this also looked at:
Network Recommendations powered by CIKNOW developed by the Science of Networks in Communities Research (SONIC) group at Northwestern University.
Recommendations will load momentarily. If you do not see content change after 30 seconds, there may be a number of reasons:
- You have javascript turned off in your browser.
- You have browser incapable of handling the scripts that load the recommendations.
- There is a problem with the recommendation service and it failed to respond.