nanoHUB.org: online simulations and more

The application was originally written in Matlab by Andres Godoy at University of Granada, Spain, and later rappturized by Hyung-Seok Hahm at University of Illinois at Urbana-Champaign.

It generates both quantum mechanical and classical electrostatic simulation results in a cross section (perpendicular to the transport direction) for two dimensional (2D) Trigate structures.

2D Poisson and Schroedinger equations are self-consistenly solved for this kind of devices. The user can select the dimensions of the silicon width (WSi), height (HSi), the gate oxide thickness (Tox) and the buried oxide thickness (TBox), and the applied gate voltage (Vg).

Other important simulation conditions are

- Room temperature: 300K
- Metal Gate Work Function: 4.61(eV)
- Substrate Doping: Na=1.0e12 Nd=1.0e10
- Orientation of a plane for the oxide interface and the cross-section: 100

The current version provides the following results:

- Classical Electron Density
- Classical Potential Distribution
- Quantum Electron Density
- First 6 Wavefunction Distribution

In case you include a simulation result in your publication, please cite the tool as the following:

* Electrostatic simulation of SOI Trigates at http://www.nanohub.org by Hyung-Seok Hahm and Andres Godoy

* F.J. Garcia Ruiz, A. Godoy, F. Gamiz, C. Sampedro, and L. Donetti, “A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects” IEEE Trans. Electron Devices, vol. 54(12), pp. 3369-3377, 2007.

Hyung-Seok Hahm, University of Illinois at Urbana-Champaign

Andres Godoy at University of Granada, Spain

F.J. Garcia Ruiz, A. Godoy, F. Gamiz, C. Sampedro, and L. Donetti, “A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects” IEEE Trans. Electron Devices, vol. 54(12), pp. 3369-3377, 2007.

If you reference this work in a publication, please cite as follows:

• Hahm, Hyung-Seok; Godoy, Andres (2008), "Quantum and Semi-classical Electrostatics Simulation of SOI Trigates," doi: 10254/nanohub-r4066.3.

  BibTex | EndNote

In addition, we would appreciate it if you would add the following acknowledgment to your publication:

• Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org

1. computational electronics
2. computational science/engineering
3. devices
4. Illinois
5. mesoscopic devices
6. nanoelectronics
7. quantum
8. quantum mechanics
9. quantum well
10. Schrodinger
11. Schroedinger
12. Schroedinger Eqn
13. semiconductor
14. Simulation
15. transistors
16. trigate
17. tunneling
18. uIllinois
19. uiuc
20. virtualization