NCN Nanoelectronics: Research Seminars
What Promises do Nanotubes and Nanowires Hold for Future Nanoelectronics Applications?
- This resource has a 9.9 Ranking
-
Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›
Usage Stats Last 12 Months: updated 01 Jul, 2008 Users: 129 Reviews & Citations Google/IEEE Avg. Review: Citations: 0
129 users
Supporting Documents
- Presentation (with audio) (SWF)
- Presentation Slides (PDF, 3.34 Mb)
- Podcast (video) What's this? (MP4, 35.61 Mb)
- Podcast (audio) What's this? (MP3, 22.25 Mb)
| Contributor(s) | Joerg Appenzeller Purdue University, West Lafayette |
|---|---|
| Abstract | Various low-dimensional materials are currently explored for future electronics applications. The common ground
for all these structures is that the surface related impact can no longer be ignored – the common approach applied
to predict properties of bulk-type three-dimensional (3D) materials. Relevant surface related effects could be e.g.
surface roughness scattering or it could mean that the broken symmetry at the interface causes quantization effects
that alter the entire band structure and result in a completely new type of material class. Examples of nano-
materials under current extensive study include: nanotubes, nanowires and graphene. While understanding the
novel properties of these materials is relevant in itself and does not need any further justification, the stakes are
different when nano-materials are discussed for electronics applications.
Here we discuss some recent experimental results on carbon nanotube field-effect transistors as well as a contact study on a novel type of silicon nanowire device. The aim is to close the gap between the current state-of-the art understanding of pure materials properties and actual applications. It will be discussed in how far carbon nanotubes are useful for low-power applications [1,2] and how ultimate scaling can be achieved. In the case of silicon nanowires it will be highlighted why extraction of intrinsic properties is still a challenge and how process modules need to be carefully adjusted to the particular challenges posed by this new material class [3]. |
| Biography |
Dr. J. Appenzeller received the M.S. and Ph.D. degrees in physics from the Technical University of Aachen,
Germany in 1991 and 1995. His Ph.D. dissertation investigated quantum transport phenomena in low dimensional
systems based on III/V heterostructures. He worked for one year as a Research Scientist in the Research Center in
Juelich, Germany before he became an Assistant Professor with the Technical University of Aachen in 1996.
During his professorship he explored mesoscopic electron transport in different materials including carbon
nanotubes and superconductor-semiconductor-hybride devices. From 1998 to 1999, he was with the Massachusetts
Institute of Technology, Cambridge, as a Visiting Scientist, exploring the ultimate scaling limits of silicon
MOSFET devices. From 2001 until 2007, he had been with the IBM T.J. Watson Research Center, Yorktown, NY,
as a Research Staff Member mainly involved in the investigation of the potential of carbon nanotubes and silicon
nanowires for a future nanoelectronics. Since 2007 he is Professor of Electrical and Computer Engineering at
Purdue University and Scientific Director of Nanoelectronics in the Birck Nanotechnology Center. His current
interests include novel devices based on low-dimensional nano-materials as nanowires, nanotubes and graphene. |
| Sponsored by | ECE Graduate Seminar Series |
| References |
|
| Cite this work | If you reference this work in a publication, please cite as follows: |
| Date posted | 18 Feb, 2008 |
| Time | 03:00 PM, November 08, 2007 |
| Location | EE 170, Purdue University, West Lafayette, IN |
| Type | Online Presentations |
| Tags |
Citations
The following are publications that have cited this resource, separated by their affiliation to the NCN.
No citations found.
Reviews
The following are reviews of this resource from other site members.
-
Posted on 18 February, 2008 by Joseph M. Cychosz
Excellent presentation of the current development directions for the CNTFET.
See also
The following are resources that may cover similar or related topics.
- 10.0 Ranking Series Part of: NCN Nanoelectronics: Research Seminars
People who looked at this also looked at:
Network Recommendations powered by CIKNOW developed by the Science of Networks in Communities Research (SONIC) group at Northwestern University.
Recommendations will load momentarily. If you do not see content change after 30 seconds, there may be a number of reasons:
- You have javascript turned off in your browser.
- You have browser incapable of handling the scripts that load the recommendations.
- There is a problem with the recommendation service and it failed to respond.
Dr. J. Appenzeller received the M.S. and Ph.D. degrees in physics from the Technical University of Aachen,
Germany in 1991 and 1995. His Ph.D. dissertation investigated quantum transport phenomena in low dimensional
systems based on III/V heterostructures. He worked for one year as a Research Scientist in the Research Center in
Juelich, Germany before he became an Assistant Professor with the Technical University of Aachen in 1996.
During his professorship he explored mesoscopic electron transport in different materials including carbon
nanotubes and superconductor-semiconductor-hybride devices. From 1998 to 1999, he was with the Massachusetts
Institute of Technology, Cambridge, as a Visiting Scientist, exploring the ultimate scaling limits of silicon
MOSFET devices. From 2001 until 2007, he had been with the IBM T.J. Watson Research Center, Yorktown, NY,
as a Research Staff Member mainly involved in the investigation of the potential of carbon nanotubes and silicon
nanowires for a future nanoelectronics. Since 2007 he is Professor of Electrical and Computer Engineering at
Purdue University and Scientific Director of Nanoelectronics in the Birck Nanotechnology Center. His current
interests include novel devices based on low-dimensional nano-materials as nanowires, nanotubes and graphene.