A bipolar junction transistor (BJT) is a type of transistor. It is a three-terminal device constructed of doped semiconductor material and may be used in amplifying or switching applications. Bipolar transistors are so named because their operation involves both electrons and holes. Although a small part of the transistor current is due to the flow of majority carriers, most of the transistor current is due to the flow of minority carriers and so BJTs are classified as 'minority-carrier' devices.

This tool allows Bipolar Junction Transistor (BJT) simulation using a 2D mesh. It allows user to simulate npn or pnp type of device in common-emitter and common-base configurations. Users can specify the Emitter, Base and Collector region depths and doping densities. Also the material and minority carrier lifetimes can be specified by the user.

If you want to know more about the physics of the operation of BJT plese refer to the following slides:

PADRE (Pisces And Device REplacement) developed by Mark Pinto & Kent Smith at AT&T Bell Labs.

NCN@Purdue

If you reference this work in a publication, please cite as follows:

• Mehrotra, Saumitra Raj; Paul, Abhijeet; Klimeck, Gerhard; Vasileska, Dragica (2008), "BJT Lab," doi: 10254/nanohub-r3984.5.

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In addition, we would appreciate it if you would add the following acknowledgment to your publication:

• Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org

1. BJT
2. nanoelectronics
3. Padre
4. semiconductor