NCN Nanoelectronics: Simulation Tools for Education
BJT Lab
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Usage Stats Overall Period: Updated 04 Dec, 2008 Users: 179 Jobs: 849 Avg. exec. time: 4 mins Reviews & Citations Google/IEEE Avg. Review: Citations: 0
179 users, detailed statistics
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This tool is closed source.
Available Versions
- 2.0 (published)
- 1.22 (unpublished)
- 1.12 (unpublished)
- 1.11 (unpublished)
- 1.0 (unpublished)
- More...
Supporting Documents
- bjt_lab_hw.doc (DOC, 22 Kb)
- bjt_lab_hw.pdf (PDF, 20.48 Kb)
| Version | 2.0 - published on 12 Nov, 2008 |
|---|---|
| Contributor(s) | Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck Purdue University, West Lafayette Dragica Vasileska Arizona State University |
| At a glance | Simulate bipolar junction transistors |
| Screenshots | |
| Description | A bipolar junction transistor (BJT) is a type of transistor. It is a three-terminal device constructed of doped semiconductor material and may be used in amplifying or switching applications. Bipolar transistors are so named because their operation involves both electrons and holes. Although a small part of the transistor current is due to the flow of majority carriers, most of the transistor current is due to the flow of minority carriers and so BJTs are classified as 'minority-carrier' devices. This tool allows Bipolar Junction Transistor (BJT) simulation using a 2D mesh. It allows user to simulate npn or pnp type of device in common-emitter and common-base configurations. Users can specify the Emitter, Base and Collector region depths and doping densities. Also the material and minority carrier lifetimes can be specified by the user. If you want to know more about the physics of the operation of BJT plese refer to the following slides: BJT tool improvements, 2.0 - It is now a full 2D simulator allowing users to plot 1D plots along the depth like conduction/valence band, electron/hole density, electric field, potential, recombination rate, current density. 1.22 - Fixed for memory issue by trimming output files. 1.12 - Update for improved quality of output curves. No overlapping of curves now. 1.11 - Discrete BJT simulator launched with output characteristics and Gummel plot. 1.1 - 1D linear BJT simulator updated for minor bugs. 1.0 - 1D linear BJT simulator launched. |
| Powered by | PADRE (Pisces And Device REplacement) developed by Mark Pinto & Kent Smith at AT&T Bell Labs. |
| Sponsored by | NCN@Purdue |
| Cite this work | If you reference this work in a publication, please cite as follows:
In addition, we would appreciate it if you would add the following acknowledgment to your publication:
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| Type | Tools |
| Tags |
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Reviews
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Posted on 12 November, 2008 by Anonymous
0 0 Login to vote Nice to understand the concepts base recombination and working of bipolar transistor.
reply | report abuse -
Posted on 28 March, 2008 by Anonymous
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Part of: NCN Nanoelectronics: Simulation Tools for Education
NCN Nanoelectronics: Simulation Tools for Education
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Related Questions & Answers
The following are questions related to this tool that were posted by other users in our questions and answers forum.
- no output characteristics computed for pnp transistors - 1 response
- no band edge diagrams anymore - 1 response
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