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NCN Nanoelectronics: Simulation Tools for Education

BJT Lab

This resource has a 8.4 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Overall Period: Updated 04 Dec, 2008
Users: 179
Jobs: 849
Avg. exec. time: 4 mins
Reviews & Citations
Google/IEEE
Avg. Review: 4.5 out of 5 stars
Citations: 0

179 users, detailed statistics

2 reviews (Review this)

0 citations

2 questions (Ask a question)

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Supporting Documents

Version 2.0 - published on 12 Nov, 2008
Contributor(s) Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck
Purdue University, West Lafayette

Dragica Vasileska
Arizona State University
At a glance Simulate bipolar junction transistors
Screenshots
  • Screenshot #1
  • Screenshot #2
  • Screenshot #3
Description

A bipolar junction transistor (BJT) is a type of transistor. It is a three-terminal device constructed of doped semiconductor material and may be used in amplifying or switching applications. Bipolar transistors are so named because their operation involves both electrons and holes. Although a small part of the transistor current is due to the flow of majority carriers, most of the transistor current is due to the flow of minority carriers and so BJTs are classified as 'minority-carrier' devices.

This tool allows Bipolar Junction Transistor (BJT) simulation using a 2D mesh. It allows user to simulate npn or pnp type of device in common-emitter and common-base configurations. Users can specify the Emitter, Base and Collector region depths and doping densities. Also the material and minority carrier lifetimes can be specified by the user.

If you want to know more about the physics of the operation of BJT plese refer to the following slides:

  • BJT Operation Description
  • BJT tool improvements,

    2.0 - It is now a full 2D simulator allowing users to plot 1D plots along the depth like conduction/valence band, electron/hole density, electric field, potential, recombination rate, current density.

    1.22 - Fixed for memory issue by trimming output files.

    1.12 - Update for improved quality of output curves. No overlapping of curves now.

    1.11 - Discrete BJT simulator launched with output characteristics and Gummel plot.

    1.1 - 1D linear BJT simulator updated for minor bugs.

    1.0 - 1D linear BJT simulator launched.

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    PADRE (Pisces And Device REplacement) developed by Mark Pinto & Kent Smith at AT&T Bell Labs.

    Sponsored by

    NCN@Purdue

    Cite this work

    If you reference this work in a publication, please cite as follows:

    • Mehrotra, Saumitra Raj; Paul, Abhijeet; Klimeck, Gerhard; Vasileska, Dragica (2008), "BJT Lab," doi: 10254/nanohub-r3984.7.

      BibTex | EndNote

    In addition, we would appreciate it if you would add the following acknowledgment to your publication:

    • Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org

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    1. 4.0 out of 5 stars 

      Posted on 12 November, 2008 by Anonymous

      0   0   Login to vote Nice to understand the concepts base recombination and working of bipolar transistor.

      reply | report abuse
    2. 5.0 out of 5 stars 

      Posted on 28 March, 2008 by Anonymous

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