Sending report ...MOSfet Homework Assignment - Role of Dielectric Constant and Thickness
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| Contributor(s) | David K. Ferry Arizona State University |
|---|---|
| Abstract | Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters: Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes), Now, change K to 20, and the oxide thickness to 6 nm, and resimulate the How do the Id vs. VG and Id vs. VD curves compare? (Hint: You need to go into the 'voltage sweep section' and turn on the Id-Vd sweep.) The point of the problem is to realize that you can't get the same performance just by increasing the dielectric constant and the thickness--one has to make some other changes as well if you want the same currents from the device. |
| Cite this work | If you reference this work in a publication, please cite as follows: |
| Date posted | 31 Jan, 2008 |
| Type | Teaching Materials |
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