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Valley splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder, and alloy disorder

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Contributor(s) Neerav Kharche, marta prada
Purdue University, West Lafayette

Timothy Boykin
University of Alabama in Huntsville

Gerhard Klimeck
Purdue University, West Lafayette
Abstract

Valley splitting (VS) in strained SiGe/Si/SiGe quantum wells grown on (001) and 2° miscut substrates is computed in a magnetic field. Calculations of flat structures significantly overestimate, while calculations of perfectly ordered structures underestimate experimentally observed VS. Step disorder and confinement alloy disorder raise the VS to the experimentally observed levels. Atomistic alloy disorder is identified as the critical physics, which cannot be modeled with analytical effective mass theory. NEMO-3D is used to simulate up to 1,000,000 atoms, where strain is computed in the valence-force field and electronic structure in the sp3d5s* model.

Credits This is a preprint of the publication: Neerav Kharche, Marta Prada, Timothy B. Boykin, and Gerhard Klimeck
"Valley-splitting in strained Silicon quantum wells modeled with 2 degree miscuts, step disorder, and alloy disorder", Applied Phys. Lett. Vol. 90, 092109 (2007). The published document resides at Applied Physics Letters.
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  • Kharche, Neerav; prada, marta; Boykin, Timothy; Klimeck, Gerhard (2008), "Valley splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder, and alloy disorder," http://www.nanohub.org/resources/3827/.

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Date posted 14 Jan, 2008
Type Publications
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