This is a simple tool that demonstrates electron and hole density distributions based on the Fermi-Dirac and Maxwell Boltzmann equations. This tool shows the dependence of carrier density, densisty of states and occupation factor on temperature and fermi level. User can choose between doped and undoped semi-conductors. Silicon, Germanium, and GaAs can be studied as a function of doping or Fermi level, and temperature.

The tool is supported by a homework assignment in which Students are asked to explore the differences between Fermi-Dirac and Maxwell-Boltzmann distributions, compute electron and hole concentrations, study temperature dependences, and study freeze-out.

The tool is supported by a homework assignment in which Students are asked to explore the differences between Fermi-Dirac and Maxwell-Boltzmann distributions, compute electron and hole concentrations, study temperature dependences, and study freeze-out.

NCN@Purdue

Semiconductor Device Fundamentals , Robert Pierret
Physics of Semiconductor Devices, S M Sze

If you reference this work in a publication, please cite as follows:

• Paul, Abhijeet; Mehrotra, Saumitra Raj; Klimeck, Gerhard (2008), "Carrier Statistics Lab," doi: 10254/nanohub-r3798.2.

  BibTex | EndNote

In addition, we would appreciate it if you would add the following acknowledgment to your publication:

• Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org

1. Carrier density
2. DOS
3. fermi
4. Maxwell Boltzmann
5. nanoelectronics
6. semiconductor