2007 Summer Undergraduate Research Intern Program Conference
The Effect of Physical Geometry on the Frequency Response of Carbon Nanotube Field-Effect Transistors
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| Contributor(s) | Dave Lyzenga Calvin College |
|---|---|
| Abstract | In order for carbon nanotube (CNT) electrical devices to be fabricated, it is necessary to obtain modifiable operation characteristics. Developing parametric equations to achieve this controllability in the vertical field-effect transistor (FET) design is an important first step toward fabrication. The capacitances associated with the physical geometry of the porous anodic alumina (PAA)-based CNTFET are explored and developed into a parametric equation for the unity current gain frequency (fT) of the device. Comparisons are drawn between predicted vertical CNTFET characteristics and those of an ideal, back-gated counterpart in the areas of unity current gain frequency and current density. |
| Biography | Electrical Engineering Student, Undergraduate Researcher, |
| Credits | Advisor: Prof. Tim Fisher |
| Sponsored by | NASA Institute for Nanoelectronics and Computing and NSF Network for Computating Nanotechnology under NASA grant no. NCC 2-1363 and NSF grant no. EEC-0228390. |
| Cite this work | If you reference this work in a publication, please cite as follows: |
| Date posted | 03 Aug, 2007 |
| Type | Online Presentations |
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Part of: 2007 Summer Undergraduate Research Intern Program Conference
2007 Summer Undergraduate Research Intern Program Conference
The NASA Institute for Nanoelectronics and Computing and NSF Network for Computating Nanotechnology offers qualifying students the opportunity to become Summer Undergraduate Research Interns (SURIs). SURIs join an ongoing cross-disciplinary research project team comprised of faculty and graduate …
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