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Electronics From the Bottom Up: top-down/bottom-up views of length

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Last 12 Months: updated 01 Jul, 2008
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Contributor(s) Muhammad A. Alam
Purdue University, West Lafayette
Abstract When devices get small stochastic effects become important. Random dopant effects lead to uncertainties in a MOSFET’s threshold voltage and gate oxides breakdown is a random process. Even a concept as simple as “channel length” becomes uncertain. This short (20 min) talk, a footnote to the presentation, “An Introduction to Electronics from the Bottom Up,” shows that these two seemingly unrelated problems are part of a more general problem involving percolative transport at the nanoscale.

For a complete list of resources related to this project please see: Electronics from the Bottom Up.
Sponsored by Intel Corporation
National Science Foundation
Network for Computational Nanotechnology
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If you reference this work in a publication, please cite as follows:

  • Alam, Muhammad A. (2007), "Electronics From the Bottom Up: top-down/bottom-up views of length," http://www.nanohub.org/resources/2974/.

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Date posted 17 Aug, 2007
Time July 06, 2007
Type Online Presentations
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