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This simple bulk Monte Carlo tool can be used to calculate observables of the electron ensemble in steady state or transient conditions. The calculation for the drift velocity as a function of electric field is readily computed. The algorithm implemented in the program is very general; nevertheless, the program uses parameters for gallium arsenide (GaAs).

The non-parabolic band structure approximation is used, with three valleys in the conduction band. The L and X satellite valleys are considered to have spherical constant energy surfaces, i.e. the effective mass used is the conductivity mass, taken as an average of longitudinal and transverse mass. The random flight selection is accomplished using an adaptation of the Constant Time Technique to calculate flight times.

[1] C. Jacoboni, L. Reggiani, “The Monte Carlo Method for Solution of Charge Transport in Semiconductor with Application to Covalent Materials ” Rev. Modern Physics, vol.55, 3, pp. 645-705, 1983.

[2] W Fawcett, AD Boardman, and S Swain, “Monte Carlo determination of electron transport properties in gallium arsenide”, J Phys Chem Solids, v 31, n 9, pp 1963-90, 1970

If you reference this work in a publication, please cite as follows:

• Mohamed, Mohamed; Bharthuar, Anjali; Ravaioli, Umberto (2008), "Bulk GaAs Ensemble Monte Carlo," doi: 10254/nanohub-r2920.1.

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• Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org

1. instruction materials
2. Monte Carlo
3. nanoelectronics
4. semiconductor