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Adept

This resource has a 9.0 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Overall Period: Updated 03 Jul, 2008
Users: 605
Jobs: 17535
Avg. exec. time: 4 secs
Reviews & Citations
Google/IEEE: updated 06 Feb, 2008
Avg. Review: 4.0 out of 5 stars
Citations: 2

605 users, detailed statistics

1 review (Review this)

2 citations

0 questions (Ask a question)

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Supporting Documents

Version 2.1b - published on 23 Jan, 2008
Contributor(s) J. L. Gray, Michael McLennan
Purdue University, West Lafayette
At a glance Simulates 1D heterostructures, including solar cells
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  • Screenshot #1
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Description

ADEPT/F solves Poisson's equation coupled with the hole and electron continuity equations in one spatial dimension in compositionally nonuniform semiconductors. It was originally written to model solar cells fabricated from a wide variety of materials, including amorphous silicon, copper indium diselenide, and cadmium telluride. However, since material parameters (band gap, mobility, etc.) can be input by the user, devices fabricated from any material for which these parameters are known can be modeled. Dark I-V, light I-V, and spectral response of solar cells (or any two terminal device) can be computed. Plots of many internal parameters, such as carrier density, recombination, electric field, etc., can be plotted at any operating point.

Homostructures and heterostructures, both abrupt and graded, can be modeled. Solar cell material systems modeled include ZnO/CdS/CIS, ZnO/CdS/CIGS, CdS/CdTe, a-Si, Si, AlGaAs/GaAs, GaSb, InP, and several others.

Credits ADEPT/F simulator was written by Jeffrey L. Gray. User interface for launching simulations and analyzing results created by Michael McLennan.
References
Cite this work

If you reference this work in a publication, please cite as follows:

  • Gray, J. L.; McLennan, Michael (2007), "Adept," doi: 10254/nanohub-r2658.2.

    BibTex | EndNote

In addition, we would appreciate it if you would add the following acknowledgment to your publication:

  • Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org

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  1. 4.0 out of 5 stars 

    Posted on 15 July, 2007 by Mahaprasad

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