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Quantum Mechanics: Landauer's Formula

Resonant Tunneling Diode Simulator

This resource has a 10.0 Ranking

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Usage Stats
Overall Period: Updated 07 Oct, 2008
Users: 801
Jobs: 24483
Avg. exec. time: 6 secs
Reviews & Citations
Google/IEEE: updated 24 Apr, 2008
Avg. Review: 5.0 out of 5 stars
Citations: 3

801 users, detailed statistics

2 reviews (Review this)

3 citations

1 question (Ask a question)

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Open Source (OSI) LogoThis tool is open source, according to this license.

Download version 1.2

Available Versions

Version 1.2 - published on 03 Sep, 2008
Contributor(s) Michael McLennan
Purdue University, West Lafayette
At a glance Simulate 1D resonant tunneling devices and other heterostructures via ballistic quantum transport
Screenshots
  • Screenshot #1
Description

Heterostructure devices have thin layers of alternating materials. Some layers act as barriers to electron flow, but if the layers are thin enough, electrons can "tunnel" through them. If two or more barriers are placed closely together, electrons can reflect between the barriers and resonate at particular energies, allowing complete transmission through the barriers, as if they were not there! This gives rise to negative differential resistance--current that goes down as voltage goes up--an interesting behavior that can be harnessed to form new devices.

Use this tool to explore the effects of tunneling through one or more material layers. Change the doping density, material properties, and layer thicknesses, and examine transmission coefficients and current-voltage relationships.

This simulator does not take into account space-charge effects associated with the electrostatic potential, and therefore does not accurately simulate real-world devices. It produces only qualitative results and is intended for instructional use only.

Powered by

SEQUAL 2.1 is a device simulation program that computes Semiconductor
Electrostatics by Quantum Analysis. Given a device, SEQUAL will compute
the electron density and the current density using a quantum mechanical,
collisionless description of electron propagation. SEQUAL is based on
the formulation of M. Cahay, M. McLennan, S. Datta, and M. S. Lundstrom,
"Importance of Space-Charge Effects in Resonant Tunneling Devices,"
Applied Physics Letters, vol. 50 (10), pp. 612-614, 1987.

References
  • M. Cahay, M. McLennan, S. Datta, and M. S. Lundstrom,
    "Importance of Space-Charge Effects in Resonant Tunneling Devices,"
    Applied Physics Letters, vol. 50 (10), pp. 612-614, 1987.
  • Cite this work

    If you reference this work in a publication, please cite as follows:

    • McLennan, Michael (2005), "Resonant Tunneling Diode Simulator," doi: 10254/nanohub-r230.3.

      BibTex | EndNote

    In addition, we would appreciate it if you would add the following acknowledgment to your publication:

    • Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org

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    1. 5.0 out of 5 stars 

      Posted on 18 April, 2007 by H.-S. Philip Wong

      0   0   Login to vote Last year, we used the RTD tool on the nanohub for our Nanoelectronics class. I assigned a mid-term exam based on the RTD analysis and one of the students took it further and wrote a paper on the subject (nanoHUB is referenced prominently in the paper). It can be one of the many success stories of the nanoHUB one can tell the NSF about.

      Thank you for your help on the RTD tool.

      H.-S. Philip Wong
      Center for Integrated Systems,
      Stanford University, Stanford,

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    2. 5.0 out of 5 stars 

      Posted on 19 October, 2005 by Anonymous

      0   0   Login to vote Very nice educational tool

      reply | report abuse

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