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DEMONs simulates electron transport through one-dimensional DEvices by the MONte Carlo technique. The program produces histograms of the carrier distribution function at different positions as well as other quantities of interest such as the average electron velocity, carrier density, and total and kinetic energy. While DEMON was originally written for the ternary Al(x)Ga(1-x)As, this version has been expanded to treat Ga(x)In(1-x)As, Al(x)In(1-x)As, and even conventional Si devices as well. Additional capabilities include the ability to compute the impulse response of devices.

Results for III-V materials are computed by DEMON 2.0, developed by Martin Klausmeier-Brown, Chris Maziar, and Paul Dodd. Results for Si are computed by SDEMON, developed by Mark Stettler.

Thanks to Steve Clark, and Mark Lundstrom for helping to design and debug the Rappture interface.

For a description of the theoretical basis and the implementation of DEMON, see M.E. Brown, "Monte Carlo Studies of Electron Transport in III-V heterostructures" MSEE Thesis, Purdue University, West Lafayette, IN, May, 1986 and the DEMON User's Manual. For a typical application, see C.M. Maziar, M.E. Klausmeier-Brown, and M.S. Lundstrom, "Proposed Structure for Transit Time Reduction in AlGaAs/GaAs Bipolar Transistors" IEEE Electron Dev. Lett., Vol. EDL-8, pp. 483-486, 1986. Demon is written in Fortran 77. Program authors are M.E. Klausmeier-Brown, C.M. Mazair, and P.E. Dodd, Purdue University. Last updated September 8, 1992.

For a description of the theoretical basis of SDemon and its implementation, consult, M.A. Stettler, "Monte Carlo Studies of Electron Transport in Silicon Bipolar Transistors," MSEE Thesis, Purdue University, West Lafayette, IN, Dec. 1990 and the SDemon User's Manual. The program is written in Fortran 77. Program author, M.A. Stettler, Purdue University. Last updated 8/5/89.

If you reference this work in a publication, please cite as follows:

• Dodd, P. E.; Stettler, M. A.; Wang, Xufeng; Klimeck, Gerhard (2006), "DEMONs," doi: 10254/nanohub-r1934.1.

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In addition, we would appreciate it if you would add the following acknowledgment to your publication:

• Simulation services for results presented here were provided by the Network for Computational Nanotechnology (NCN) at nanoHUB.org

1. microelectronics
2. Monte Carlo
3. nanoelectronics
4. transport/Boltzmann